Pattern verifying method, pattern verifying device, program, and manufacturing method of semiconductor device
摘要:
An overlapping margin of a second pattern for a first pattern is corrected for at least one of the first pattern and the second pattern (S50). Next, a relative distance between the first pattern and the second pattern after the overlapping margin is corrected is calculated (S60). Next, it is determined whether or not the relative distance satisfies a criterion (S70). Thus, the pattern can be verified under the consideration of the overlapping margin.
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