Invention Grant
- Patent Title: Thin film capacitor and method of fabrication thereof
- Patent Title (中): 薄膜电容器及其制造方法
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Application No.: US13328440Application Date: 2011-12-16
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Publication No.: US08399304B2Publication Date: 2013-03-19
- Inventor: Juan Carlos Figueroa , Damien Francis Reardon
- Applicant: Juan Carlos Figueroa , Damien Francis Reardon
- Applicant Address: US DE Wilmington
- Assignee: CDA Processing Limited Liability Company
- Current Assignee: CDA Processing Limited Liability Company
- Current Assignee Address: US DE Wilmington
- Main IPC: H01L21/50
- IPC: H01L21/50 ; H01L21/8242 ; H01L21/20
Abstract:
Methods for fabricating a capacitor are provided. In the methods, a dielectric may be formed on a metal (e.g. nickel) substrate, and a copper electrode is formed thereon, followed by the thinning of the metal substrate from its non-coated face, and subsequently forming a copper electrode on the thinned, non-coated face of the substrate.
Public/Granted literature
- US20120084955A1 THIN FILM CAPACITOR AND METHOD OF FABRICATION THEREOF Public/Granted day:2012-04-12
Information query
IPC分类:
