发明授权
- 专利标题: Active device array substrate and method for fabricating the same
- 专利标题(中): 有源器件阵列衬底及其制造方法
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申请号: US12943933申请日: 2010-11-11
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公开(公告)号: US08399891B2公开(公告)日: 2013-03-19
- 发明人: Po-Lin Lai , Ying-Fa Huang , Chun-Ming Yang , Wen-Bin Wu , Wen-Yi Lin
- 申请人: Po-Lin Lai , Ying-Fa Huang , Chun-Ming Yang , Wen-Bin Wu , Wen-Yi Lin
- 申请人地址: TW Hsinchu
- 专利权人: Au Optronics Corporation
- 当前专利权人: Au Optronics Corporation
- 当前专利权人地址: TW Hsinchu
- 代理机构: Jianq Chyun IP Office
- 优先权: TW99127601A 20100818
- 主分类号: H01L29/72
- IPC分类号: H01L29/72
摘要:
An active device array substrate and a fabricating method thereof are provided. A first patterned conductive layer including separated scan line patterns is formed on a substrate. Each scan line pattern includes a first and second scan lines adjacent to each other. Both the first and the second scan lines have first and second contacts. An open inspection on the scan line patterns is performed. Channel layers are formed on the substrate. A second patterned conductive layer including data lines interlaced with the first and second scan lines, sources and drains located above the channel layers, and connectors is formed on the substrate. The sources electrically connect the data lines correspondingly. At least one of the connectors electrically connects the first and second scan lines, so as to form a loop in each scan line pattern. Pixel electrodes electrically connected to the drains are formed.
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