Invention Grant
- Patent Title: Semiconductor light emitting device
- Patent Title (中): 半导体发光器件
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Application No.: US13211854Application Date: 2011-08-17
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Publication No.: US08399894B2Publication Date: 2013-03-19
- Inventor: Hideto Furuyama
- Applicant: Hideto Furuyama
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-005140 20090113
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A wiring electrode is provided on a mount substrate. A light emitting element is provided on the wiring electrode to connect electrically with the wiring electrode and is configured to emit a blue to ultraviolet light. A reflective film is provided above the light emitting element to cover the light emitting element so that a space is interposed between the reflective film and the light emitting element. The reflective film is capable of transmitting the blue to ultraviolet light. A fluorescent material layer is provided above the light emitting element to cover the light emitting element so that the reflective film is located between the fluorescent material layer and the light emitting element. A light from the fluorescent material layer is reflected by the reflective film.
Public/Granted literature
- US20110297991A1 SEMICONDUCTOR LIGHT EMITTING DEVICE Public/Granted day:2011-12-08
Information query
IPC分类: