Invention Grant
US08399952B2 Integrated circuit devices having a strontium ruthenium oxide interface 有权
具有锶氧化钌界面的集成电路器件

Integrated circuit devices having a strontium ruthenium oxide interface
Abstract:
Strontium ruthenium oxide provides an effective interface between a ruthenium conductor and a strontium titanium oxide dielectric. Formation of the strontium ruthenium oxide includes the use of atomic layer deposition to form strontium oxide and subsequent annealing of the strontium oxide to form the strontium ruthenium oxide. A first atomic layer deposition of strontium oxide is preformed using water as an oxygen source, followed by a subsequent atomic layer deposition of strontium oxide using ozone as an oxygen source.
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