Invention Grant
- Patent Title: Integrated circuit devices having a strontium ruthenium oxide interface
- Patent Title (中): 具有锶氧化钌界面的集成电路器件
-
Application No.: US13103162Application Date: 2011-05-09
-
Publication No.: US08399952B2Publication Date: 2013-03-19
- Inventor: Bhaskar Srinivasan , Vassil Antonov , John Smythe
- Applicant: Bhaskar Srinivasan , Vassil Antonov , John Smythe
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Leffert Jay & Polglaze, P.A.
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
Strontium ruthenium oxide provides an effective interface between a ruthenium conductor and a strontium titanium oxide dielectric. Formation of the strontium ruthenium oxide includes the use of atomic layer deposition to form strontium oxide and subsequent annealing of the strontium oxide to form the strontium ruthenium oxide. A first atomic layer deposition of strontium oxide is preformed using water as an oxygen source, followed by a subsequent atomic layer deposition of strontium oxide using ozone as an oxygen source.
Public/Granted literature
- US20110210423A1 INTEGRATED CIRCUIT DEVICES HAVING A STRONTIUM RUTHENIUM OXIDE INTERFACE Public/Granted day:2011-09-01
Information query
IPC分类: