发明授权
- 专利标题： Voltage boosting in MRAM current drivers
- 专利标题（中）： MRAM电流驱动器的升压电压
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申请号： US12852335申请日： 2010-08-06
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公开(公告)号： US08400866B2公开(公告)日： 2013-03-19
- 发明人: Krishnakumar Mani , Anil Gupta
- 申请人： Krishnakumar Mani , Anil Gupta
- 申请人地址： US CA Santa Clara
- 专利权人： Magsil Corporation
- 当前专利权人： Magsil Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Hahn and Moodley LLP
- 代理商 Vani Moodley, Esq.
- 主分类号： G11C8/00
- IPC分类号： G11C8/00
摘要：
A current driving mechanism for a magnetic memory device, comprising: a) a current driver circuit; and b) a current decoding block coupled to the current driver circuit, wherein the current decoding block comprises a transistor (M18) to control driver currents from the current driver circuit, and wherein the transistor (M18) has a smaller form factor then otherwise possible by virtue of maintaining a gate thereof at a negative voltage.
公开/授权文献
- US20110032755A1 VOLTAGE BOOSTING IN MRAM CURRENT DRIVERS 公开/授权日：2011-02-10