Invention Grant
- Patent Title: Plasma processing apparatus and plasma processing method
- Patent Title (中): 等离子体处理装置和等离子体处理方法
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Application No.: US13014155Application Date: 2011-01-26
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Publication No.: US08404137B2Publication Date: 2013-03-26
- Inventor: Chishio Koshimizu , Naoki Matsumoto
- Applicant: Chishio Koshimizu , Naoki Matsumoto
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2006-211747 20060803
- Main IPC: G01R31/00
- IPC: G01R31/00

Abstract:
A plasma processing apparatus includes a plurality of radio-frequency power supplies for supplying radio-frequency powers having frequencies different from each other, a common feeding line for superposing radio-frequency powers supplied respectively from the plurality of radio-frequency power supplies and feeding the superposed radio-frequency power to a same radio-frequency electrode, a radio-frequency power extracting device for extracting radio-frequency powers having predetermined frequencies from radio-frequency powers fed via the feeding line, and a radio-frequency voltage detector for measuring voltages of the radio-frequency powers having the predetermined frequencies extracted by the radio-frequency power extracting device.
Public/Granted literature
- US20110114599A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD Public/Granted day:2011-05-19
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