发明授权
US08404512B1 Crystallization methods for preparing group IBIIIAVIA thin film solar absorbers
失效
制备IBIIIAVIA薄膜太阳能吸收器的结晶方法
- 专利标题： Crystallization methods for preparing group IBIIIAVIA thin film solar absorbers
- 专利标题（中）： 制备IBIIIAVIA薄膜太阳能吸收器的结晶方法
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申请号： US13041285申请日： 2011-03-04
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公开(公告)号： US08404512B1公开(公告)日： 2013-03-26
- 发明人: Serdar Aksu , Mustafa Pinarbasi
- 申请人： Serdar Aksu , Mustafa Pinarbasi
- 申请人地址： US CA San Jose
- 专利权人： SoloPower, Inc.
- 当前专利权人： SoloPower, Inc.
- 当前专利权人地址： US CA San Jose
- 代理机构： Knobbe, Martens, Olson & Bear, LLP
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
The present invention provides methods for forming a doped Group IBIIIAVIA absorber layer for a solar cell. The method includes forming precursor layers that include a dopant rich layer and then annealing the precursor layers. The annealing process results in dopants diffusing through the layers to an exterior surface. The annealing process is periodically halted to remove dopants from the exposed surface.
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