发明授权
US08404525B2 Semiconductor device, manufacturing method of semiconductor device, and RFID tag
有权
半导体器件，半导体器件的制造方法和RFID标签
- 专利标题： Semiconductor device, manufacturing method of semiconductor device, and RFID tag
- 专利标题（中）： 半导体器件，半导体器件的制造方法和RFID标签
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申请号： US13115432申请日： 2011-05-25
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公开(公告)号： US08404525B2公开(公告)日： 2013-03-26
- 发明人: Kunio Hosoya , Saishi Fujikawa , Satohiro Okamoto
- 申请人： Kunio Hosoya , Saishi Fujikawa , Satohiro Okamoto
- 申请人地址： JP
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP
- 代理机构： Husch Blackwell LLP
- 优先权： JP2006-002130 20060110
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
The present invention provides a semiconductor device which is formed at low cost and has a great versatility, a manufacturing method thereof, and further a semiconductor device with an improved yield, and a manufacturing method thereof. A structure, which has a base including a plurality of depressions having different shapes or sizes, and a plurality of IC chips which are disposed in the depressions and which fit the depressions, is formed. A semiconductor device which selectively includes a function in accordance with an application, by using the base including the plurality of depressions and the IC chips which fit the depressions, can be manufactured at low cost.
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