Invention Grant
- Patent Title: Nonvolatile memory element
- Patent Title (中): 非易失性存储元件
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Application No.: US12920154Application Date: 2010-02-03
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Publication No.: US08405076B2Publication Date: 2013-03-26
- Inventor: Takeki Ninomiya , Takeshi Takagi , Zhiqiang Wei
- Applicant: Takeki Ninomiya , Takeshi Takagi , Zhiqiang Wei
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JP2009-023449 20090204
- International Application: PCT/JP2010/000624 WO 20100203
- International Announcement: WO2010/090002 WO 20100812
- Main IPC: H01L29/12
- IPC: H01L29/12
Abstract:
A nonvolatile memory element (100) includes a variable resistance layer (107) including a first metal oxide MOx and a second metal oxide MOy, and reaction energy of chemical reaction related to the first metal oxide, the second metal oxide, oxygen ions, and electrons is 2 eV or less. The chemical reaction is expressed by a formula 13, where a combination (MOx, MOy) of MOx and MOy is selected from a group including (Cr2O3, CrO3), (Co3O4, Co2O3), (Mn3O4, Mn2O3), (VO2, V2O5), (Ce2O3, CeO2), (W3O8, WO3), (Cu2O, CuO), (SnO, SnO2), (NbO2, Nb2O5), and (Ti2O3, TiO2). [Mathematical Expression 13] MOx+(y−x)O2−MOy+2(y−x)e− (Formula 13)
Public/Granted literature
- US20110001109A1 NONVOLATILE MEMORY ELEMENT Public/Granted day:2011-01-06
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