发明授权
- 专利标题： Film thickness measurement method, epitaxial wafer production process and epitaxial wafer
- 专利标题（中）： 膜厚测量方法，外延晶片生产工艺和外延晶片
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申请号： US12480921申请日： 2009-06-09
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公开(公告)号： US08409349B2公开(公告)日： 2013-04-02
- 发明人: Kazuhiro Ohkubo
- 申请人： Kazuhiro Ohkubo
- 申请人地址： JP Tokyo
- 专利权人： Sumco Corporation
- 当前专利权人： Sumco Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Greenblum & Bernstein, P.L.C.
- 优先权： JP2008-151858 20080610
- 主分类号： H01L21/322
- IPC分类号： H01L21/322 ; C30B23/00 ; C30B25/00 ; C30B28/12 ; C30B28/14 ; C30B35/00
摘要：
A film thickness measurement method for measuring a change in film thickness of 0.3 μm or less in a silicon wafer by FTIR, having an auxiliary film formation step for depositing an auxiliary film for measurement on a surface to be measured for the change in film thickness, an auxiliary film thickness measurement step for measuring the film thickness of the auxiliary film, a measurement step for measuring the film thickness of the auxiliary film after the change in film thickness, and a calculation step for calculating a change in film thickness of a back surface deposit from the result of the measurement step and the result of the auxiliary film thickness measurement step.
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