Invention Grant
- Patent Title: Separation method of nitride semiconductor layer, semiconductor device, manufacturing method thereof, semiconductor wafer, and manufacturing method thereof
- Patent Title (中): 氮化物半导体层的分离方法，半导体器件，其制造方法，半导体晶片及其制造方法
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Application No.: US12801716Application Date: 2010-06-22
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Publication No.: US08409366B2Publication Date: 2013-04-02
- Inventor: Mitsuhiko Ogihara , Tomohiko Sagimori , Masaaki Sakuta , Akihiro Hashimoto
- Applicant: Mitsuhiko Ogihara , Tomohiko Sagimori , Masaaki Sakuta , Akihiro Hashimoto
- Applicant Address: JP Tokyo
- Assignee: Oki Data Corporation
- Current Assignee: Oki Data Corporation
- Current Assignee Address: JP Tokyo
- Agency: Rabin & Berdo, P.C.
- Priority: JP2009-148455 20090623; JP2009-148666 20090623
- Main IPC: H01L29/16
- IPC: H01L29/16 ; H01L33/00 ; H01L21/02 ; H01L29/20
Abstract:
In a separation method of a nitride semiconductor layer, a graphene layer in the form of a single layer or two or more layers is formed on a surface of a first substrate. A nitride semiconductor layer is formed on the graphene layer so that the nitride semiconductor layer is bonded to the graphene layer with a bonding force due to regularity of potential at atomic level at an interface therebetween without utilizing covalent bonding. The nitride semiconductor layer is separated from the first substrate with a force which is greater than the bonding force between the nitride semiconductor layer and the graphene layer, or greater than a bonding force between respective layers of the graphene layer.
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