发明授权
US08409904B2 Methods for forming anti-reflection structures for CMOS image sensors
有权
CMOS图像传感器形成抗反射结构的方法
- 专利标题: Methods for forming anti-reflection structures for CMOS image sensors
- 专利标题(中): CMOS图像传感器形成抗反射结构的方法
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申请号: US13165375申请日: 2011-06-21
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公开(公告)号: US08409904B2公开(公告)日: 2013-04-02
- 发明人: James W. Adkisson , John J. Ellis-Monaghan , Jeffrey P. Gambino , Charles F. Musante
- 申请人: James W. Adkisson , John J. Ellis-Monaghan , Jeffrey P. Gambino , Charles F. Musante
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Scully, Scott, Murphy & Presser, P.C.
- 代理商 Anthony J. Canale
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
Protuberances, having vertical and lateral dimensions less than the wavelength range of lights detectable by a photodiode, are formed at an optical interface between two layers having different refractive indices. The protuberances may be formed by employing self-assembling block copolymers that form an array of sublithographic features of a first polymeric block component within a matrix of a second polymeric block component. The pattern of the polymeric block component is transferred into a first optical layer to form an array of nanoscale protuberances. Alternately, conventional lithography may be employed to form protuberances having dimensions less than the wavelength of light. A second optical layer is formed directly on the protuberances of the first optical layer. The interface between the first and second optical layers has a graded refractive index, and provides high transmission of light with little reflection.
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