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US08409979B2 Semiconductor device and method of forming interconnect structure with conductive pads having expanded interconnect surface area for enhanced interconnection properties 有权
用具有扩展的互连表面积的导电焊盘形成互连结构以增强互连特性的半导体器件和方法

Semiconductor device and method of forming interconnect structure with conductive pads having expanded interconnect surface area for enhanced interconnection properties
摘要：
A semiconductor device has a substrate and first conductive pads formed over the substrate. An interconnect surface area of the first conductive pads is expanded by forming a plurality of recesses into the first conductive pads. The recesses can be an arrangement of concentric rings, arrangement of circular recesses, or arrangement of parallel linear trenches. Alternatively, the interconnect surface area of the first conductive pads is expanded by forming a second conductive pad over the first conductive pad. A semiconductor die has a plurality of interconnect structures formed over a surface of the semiconductor die. The semiconductor die is mounted to the substrate with the interconnect structures contacting the expanded interconnect surface area of the first conductive pads to increase bonding strength of the interconnect structure to the first conductive pads. A mold underfill material is deposited between the semiconductor die and substrate.
摘要（中）：

半导体器件具有衬底和形成在衬底上的第一导电焊盘。 通过在第一导电焊盘中形成多个凹槽来扩展第一导电焊盘的互连表面积。 凹槽可以是同心环的布置，圆形凹槽的布置或平行的线性沟槽的布置。 或者，通过在第一导电焊盘上形成第二导电焊盘来扩展第一导电焊盘的互连表面积。 半导体管芯具有形成在半导体管芯的表面上的多个互连结构。 半导体管芯安装到衬底上，互连结构接触第一导电焊盘的扩展互连表面区域，以增加互连结构与第一导电焊盘的接合强度。 模具底部填充材料沉积在半导体管芯和衬底之间。

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