发明授权
- 专利标题： Semiconductor device and method for producing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11869363申请日： 2007-10-09
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公开(公告)号： US08410592B2公开(公告)日： 2013-04-02
- 发明人: Ralf Otremba , Xaver Schloegel
- 申请人： Ralf Otremba , Xaver Schloegel
- 申请人地址： DE Neubiberg
- 专利权人： Infineon Technologies, AG
- 当前专利权人： Infineon Technologies, AG
- 当前专利权人地址： DE Neubiberg
- 代理机构： Edell, Shapiro & Finnan, LLC
- 优先权： DE102006047761 20061006
- 主分类号： H01L23/02
- IPC分类号： H01L23/02 ; H01L23/48 ; H01L23/52 ; H01L21/00 ; H01L21/44
摘要：
A semiconductor device includes a vertical transistor and an external contact plane. The transistor includes: a first side with a first load electrode and a control electrode, and an opposite second side with a second load electrode. The first side of the transistor faces the external contact plane. A dielectric layer extends from at least one edge side of the transistor as far as the second load terminal. An electrically conductive deposited layer is arranged on the dielectric layer and electrically connects the second load electrode to the second load terminal.
公开/授权文献
- US20080087913A1 Semiconductor Device and Method for Producing the Same 公开/授权日：2008-04-17
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