Invention Grant
- Patent Title: Metrology method and apparatus, lithographic apparatus, device manufacturing method and substrate
- Patent Title (中): 测量方法和设备，光刻设备，器件制造方法和衬底
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Application No.: US12855394Application Date: 2010-08-12
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Publication No.: US08411287B2Publication Date: 2013-04-02
- Inventor: Hendrik Jan Hidde Smilde , Arno Jan Bleeker , Arie Jeffrey Den Boef , Armand Eugene Albert Koolen , Henricus Petrus Maria Pellemans , Reinder Teun Plug , Willem Marie Julia Marcel Coene
- Applicant: Hendrik Jan Hidde Smilde , Arno Jan Bleeker , Arie Jeffrey Den Boef , Armand Eugene Albert Koolen , Henricus Petrus Maria Pellemans , Reinder Teun Plug , Willem Marie Julia Marcel Coene
- Applicant Address: NL Veldhoven
- Assignee: ASML Netherlands B.V.
- Current Assignee: ASML Netherlands B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- Main IPC: G01B11/14
- IPC: G01B11/14
Abstract:
A metrology apparatus is arranged to illuminate a plurality of targets with an off-axis illumination mode. Images of the targets are obtained using only one first order diffracted beam. Where the target is a composite grating, overlay measurements can be obtained from the intensities of the images of the different gratings. Overlay measurements can be corrected for errors caused by variations in the position of the gratings in an image field.
Public/Granted literature
- US20110043791A1 Metrology Method and Apparatus, Lithographic Apparatus, Device Manufacturing Method and Substrate Public/Granted day:2011-02-24
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