发明授权
US08411399B2 Defectivity-immune technique of implementing MIM-based decoupling capacitors
有权
实现基于MIM的去耦电容器的缺陷免疫技术
- 专利标题: Defectivity-immune technique of implementing MIM-based decoupling capacitors
- 专利标题(中): 实现基于MIM的去耦电容器的缺陷免疫技术
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申请号: US12839148申请日: 2010-07-19
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公开(公告)号: US08411399B2公开(公告)日: 2013-04-02
- 发明人: Ramnath Venkatraman , Ruggero Castagnetti
- 申请人: Ramnath Venkatraman , Ruggero Castagnetti
- 申请人地址: US CA Milpitas
- 专利权人: LSI Corporation
- 当前专利权人: LSI Corporation
- 当前专利权人地址: US CA Milpitas
- 主分类号: H02H3/22
- IPC分类号: H02H3/22
摘要:
An integrated circuit power supply decoupling circuit includes a capacitor and a protection circuit. The capacitor has a first terminal and a second terminal. The protection circuit includes a first transistor having a first conduction path, and a second transistor having a second conduction path. One terminal of the first conduction path is connected to the first terminal of the capacitor, and another terminal of the first conduction path is connected to a first power supply rail. One terminal of the second conduction path is connected to the second terminal of the capacitor, and another terminal of the second conduction path is connected to a second power supply rail.
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