发明授权
- 专利标题： Method for fabricating a structure for a microelectric device
- 专利标题（中）： 微电子器件结构的制造方法
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申请号： US12945681申请日： 2010-11-12
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公开(公告)号： US08413317B1公开(公告)日： 2013-04-09
- 发明人: Dujiang Wan , Hai Sun , Ge Yi , Wei Gao , Hong Zhang , Guanghong Luo , Yunjun Tang , Tiffany Yun Wen Jiang , Zhigang Zhou , Wencheng Su
- 申请人： Dujiang Wan , Hai Sun , Ge Yi , Wei Gao , Hong Zhang , Guanghong Luo , Yunjun Tang , Tiffany Yun Wen Jiang , Zhigang Zhou , Wencheng Su
- 申请人地址： US CA Fremont
- 专利权人： Western Digital (Fremont), LLC
- 当前专利权人： Western Digital (Fremont), LLC
- 当前专利权人地址： US CA Fremont
- 主分类号： G11B5/127
- IPC分类号： G11B5/127 ; H04R31/00
摘要：
A method and system for fabricating a microelectric device are described. A write pole of an energy assisted magnetic recording head or a capacitor might be fabricated. The method includes depositing a resist film and curing the resist film at a temperature of at least 180 degrees centigrade. A cured resist film capable of supporting a line having an aspect ratio of at least ten is thus provided. A portion of the cured resist film is removed. A remaining portion of the resist film forms the line. An insulating or nonmagnetic layer is deposited after formation of the line. The line is removed to provide a trench in the insulating or nonmagnetic layer. The trench has a height and a width. The height divided by the width corresponds to the aspect ratio. At least part of the structure is provided in the trench.
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