发明授权
- 专利标题: Plasma deposition of a thin film
- 专利标题(中): 等离子体沉积薄膜
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申请号: US12822406申请日: 2010-06-24
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公开(公告)号: US08414985B2公开(公告)日: 2013-04-09
- 发明人: Seyoun Moon , Wooyoung Kim , Sehwon Ahn , Dongjoo You
- 申请人: Seyoun Moon , Wooyoung Kim , Sehwon Ahn , Dongjoo You
- 申请人地址: KR Seoul
- 专利权人: LG Electronics, Inc.
- 当前专利权人: LG Electronics, Inc.
- 当前专利权人地址: KR Seoul
- 代理机构: Fish & Richardson P.C.
- 优先权: KR10-2009-0056320 20090624
- 主分类号: H05H1/24
- IPC分类号: H05H1/24
摘要:
A plasma deposition apparatus and a method of manufacturing a thin film using the same are disclosed. The method of manufacturing a thin film includes introducing a process gas in a reaction chamber of a plasma deposition device, the reaction chamber including a first electrode and a second electrode. The method further includes applying, by a first power supply unit, a first pulsed RF signal to one of the first and second electrodes, and applying, by a second power supply unit, a second pulsed RF signal to one of the first and second electrodes. The first pulsed RF signal and the second pulsed RF signal are applied based on a predetermined deposition variable.
公开/授权文献
- US20100330299A1 PLASMA DEPOSITION OF A THIN FILM 公开/授权日:2010-12-30