公开(公告)号：US08414985B2

公开(公告)日：2013-04-09

申请号：US12822406

申请日：2010-06-24

申请人： Seyoun Moon ,  Wooyoung Kim ,  Sehwon Ahn ,  Dongjoo You

发明人： Seyoun Moon ,  Wooyoung Kim ,  Sehwon Ahn ,  Dongjoo You

IPC分类号： H05H1/24

CPC分类号： H01J37/32146 ,  C23C16/24 ,  C23C16/505 ,  C23C16/515 ,  C23C16/517 ,  H01J37/32091 ,  H01J37/32165

摘要： A plasma deposition apparatus and a method of manufacturing a thin film using the same are disclosed. The method of manufacturing a thin film includes introducing a process gas in a reaction chamber of a plasma deposition device, the reaction chamber including a first electrode and a second electrode. The method further includes applying, by a first power supply unit, a first pulsed RF signal to one of the first and second electrodes, and applying, by a second power supply unit, a second pulsed RF signal to one of the first and second electrodes. The first pulsed RF signal and the second pulsed RF signal are applied based on a predetermined deposition variable.

摘要翻译： 公开了一种等离子体沉积设备及其制造方法。 制造薄膜的方法包括在等离子体沉积装置的反应室中引入工艺气体，反应室包括第一电极和第二电极。 该方法还包括由第一电源单元将第一脉冲RF信号施加到第一和第二电极之一，并且由第二电源单元将第二脉冲RF信号施加到第一和第二电极之一 。 基于预定的沉积变量施加第一脉冲RF信号和第二脉冲RF信号。