Invention Grant
- Patent Title: Single-mask double-patterning lithography
- Patent Title (中): 单掩模双图案平版印刷
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Application No.: US12723798Application Date: 2010-03-15
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Publication No.: US08415089B1Publication Date: 2013-04-09
- Inventor: Puneet Gupta , Rani S. Ghaida
- Applicant: Puneet Gupta , Rani S. Ghaida
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Withrow & Terranova, PLLC
- Main IPC: G03F7/00
- IPC: G03F7/00 ; G03C5/00
Abstract:
A method of printing a final layout on a wafer comprises printing a first pattern from a first mask located at a first position onto the wafer, shifting the first mask by a predetermined distance to a second position, printing the first pattern from the first mask located at the second position onto the wafer, and applying a trim mask to the wafer.
Information query
