Invention Grant
- Patent Title: Water mark defect prevention for immersion lithography
- Patent Title (中): 浸渍光刻防水标识缺陷
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Application No.: US13079942Application Date: 2011-04-05
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Publication No.: US08415091B2Publication Date: 2013-04-09
- Inventor: Ching-Yu Chang
- Applicant: Ching-Yu Chang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F7/26
- IPC: G03F7/26
Abstract:
A photoresist material having a polymer that turns soluble to a base solution in response to reaction with acid. The material includes a photo-acid generator (PAG) that decomposes to form acid in response to radiation energy and a quencher capable of neutralizing acid and having a reduced mobility. The photoresist material can thereby prevent water mark defects from immersion lithography.
Public/Granted literature
- US20110183273A1 Water Mark Defect Prevention for Immersion Lithography Public/Granted day:2011-07-28
Information query
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