发明授权
- 专利标题: Method of enhancing photoresist adhesion to rare earth oxides
- 专利标题(中): 提高光致抗蚀剂对稀土氧化物的附着力的方法
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申请号: US12721738申请日: 2010-03-11
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公开(公告)号: US08415212B2公开(公告)日: 2013-04-09
- 发明人: James K. Schaeffer , Eric D. Luckowski , Todd C. Bailey , Amy L. Child , Daniel Jaeger , Renee Mo , Ying H. Tsang
- 申请人: James K. Schaeffer , Eric D. Luckowski , Todd C. Bailey , Amy L. Child , Daniel Jaeger , Renee Mo , Ying H. Tsang
- 申请人地址: US TX Austin
- 专利权人: Freescale Semiconductor, Inc.
- 当前专利权人: Freescale Semiconductor, Inc.
- 当前专利权人地址: US TX Austin
- 代理机构: Hamilton & Terrile, LLP
- 代理商 Michael Rocco Cannatti
- 主分类号: H01L21/8238
- IPC分类号: H01L21/8238 ; H01L21/3205
摘要:
A method and apparatus are described for fabricating metal gate electrodes (85, 86) over a high-k gate dielectric layer (32) having a rare earth oxide capping layer (44) in at least the NMOS device area by treating the surface of a rare earth oxide capping layer (44) with an oxygen-free plasma process (42) to improve photoresist adhesion, forming a patterned photoresist layer (52) directly on the rare earth oxide capping layer (44), and then applying a wet etch process (62) to remove the exposed portion of the rare earth oxide capping layer (44) from the PMOS device area.