公开(公告)号：US08415212B2

公开(公告)日：2013-04-09

申请号：US12721738

申请日：2010-03-11

申请人： James K. Schaeffer ,  Eric D. Luckowski ,  Todd C. Bailey ,  Amy L. Child ,  Daniel Jaeger ,  Renee Mo ,  Ying H. Tsang

发明人： James K. Schaeffer ,  Eric D. Luckowski ,  Todd C. Bailey ,  Amy L. Child ,  Daniel Jaeger ,  Renee Mo ,  Ying H. Tsang

IPC分类号： H01L21/8238 ,  H01L21/3205

CPC分类号： H01L21/823857 ,  H01L21/28185 ,  H01L21/3105 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/823842 ,  H01L29/1054 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66651

摘要： A method and apparatus are described for fabricating metal gate electrodes (85, 86) over a high-k gate dielectric layer (32) having a rare earth oxide capping layer (44) in at least the NMOS device area by treating the surface of a rare earth oxide capping layer (44) with an oxygen-free plasma process (42) to improve photoresist adhesion, forming a patterned photoresist layer (52) directly on the rare earth oxide capping layer (44), and then applying a wet etch process (62) to remove the exposed portion of the rare earth oxide capping layer (44) from the PMOS device area.

摘要翻译： 描述了一种用于在至少NMOS器件区域中具有稀土氧化物覆盖层（44）的高k栅介质层（32）之上制造金属栅电极（85,86）的方法和装置， 具有无氧等离子体工艺（42）的稀土氧化物覆盖层（44）以改善光致抗蚀剂的粘合性，在稀土氧化物覆盖层（44）上直接形成图案化的光致抗蚀剂层（52），然后施加湿蚀刻工艺 （62）从PMOS器件区域去除所述稀土氧化物覆盖层（44）的暴露部分。

公开(公告)号：US20110223756A1

公开(公告)日：2011-09-15

申请号：US12721738

申请日：2010-03-11

申请人： James K. Schaeffer ,  Eric D. Luckowski ,  Todd C. Bailey ,  Amy L. Child ,  Daniel Jaeger ,  Renee Mo ,  Ying H. Tsang

发明人： James K. Schaeffer ,  Eric D. Luckowski ,  Todd C. Bailey ,  Amy L. Child ,  Daniel Jaeger ,  Renee Mo ,  Ying H. Tsang

IPC分类号： H01L21/28 ,  H01L21/8238

CPC分类号： H01L21/823857 ,  H01L21/28185 ,  H01L21/3105 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/823842 ,  H01L29/1054 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66651

摘要： A method and apparatus are described for fabricating metal gate electrodes (85, 86) over a high-k gate dielectric layer (32) having a rare earth oxide capping layer (44) in at least the NMOS device area by treating the surface of a rare earth oxide capping layer (44) with an oxygen-free plasma process (42) to improve photoresist adhesion, forming a patterned photoresist layer (52) directly on the rare earth oxide capping layer (44), and then applying a wet etch process (62) to remove the exposed portion of the rare earth oxide capping layer (44) from the PMOS device area.

摘要翻译： 描述了一种用于在至少NMOS器件区域中具有稀土氧化物覆盖层（44）的高k栅介质层（32）之上制造金属栅电极（85,86）的方法和装置， 具有无氧等离子体工艺（42）的稀土氧化物覆盖层（44）以改善光致抗蚀剂的粘合性，在稀土氧化物覆盖层（44）上直接形成图案化的光致抗蚀剂层（52），然后施加湿蚀刻工艺 （62）从PMOS器件区域去除所述稀土氧化物覆盖层（44）的暴露部分。

公开(公告)号：US09708547B2

公开(公告)日：2017-07-18

申请号：US13172370

申请日：2011-06-29

申请人： Sunder Ramachandran ,  Vladimir Jovancicevic ,  Ying H. Tsang ,  Michael P. Squicciarini ,  Philippe Prince ,  Jianzhong Yang ,  Kyle C. Cattanach

发明人： Sunder Ramachandran ,  Vladimir Jovancicevic ,  Ying H. Tsang ,  Michael P. Squicciarini ,  Philippe Prince ,  Jianzhong Yang ,  Kyle C. Cattanach

IPC分类号： C10G29/26 ,  C02F1/68 ,  C10G19/02 ,  C10G19/04 ,  C10G29/20 ,  C10G29/22 ,  B01D53/48 ,  B01D53/52 ,  C02F101/10 ,  C02F103/36 ,  B01D53/14

CPC分类号： C10G29/26 ,  B01D53/1468 ,  B01D53/1487 ,  B01D53/1493 ,  B01D53/48 ,  B01D53/52 ,  B01D2251/304 ,  B01D2251/306 ,  B01D2252/103 ,  B01D2252/20 ,  B01D2252/60 ,  B01D2257/304 ,  B01D2257/306 ,  C02F1/683 ,  C02F2101/101 ,  C02F2101/40 ,  C02F2103/365 ,  C10G19/02 ,  C10G19/04 ,  C10G29/205 ,  C10G29/22 ,  C10G2300/202 ,  C10G2300/207 ,  C10G2300/44

摘要： Hydrogen sulfide (H2S) and/or mercaptan scavengers are chemicals that remove H2S and/or mercaptans from gas, oil and water. Water-based formulations may be made and used employing scavenging compounds having the formulae: wherein each R1, R2, R3, and R4 are the same or different and are selected from the group consisting of hydrogen, an alkyl, an alkenyl, an aryl, an acyl, a halogen, a hydroxyl, a nitro, an alkyl ester, an aryl ester, an alkyl ether, an aryl ether, a hydroxymethyl, an anhydride group, an amino, and a sulfide. In one non-limiting embodiment the compounds (A) and (B) do not contain nitrogen atoms. Water-based formulations, such as those using a protic solvent with the above compounds, work well as H2S scavengers.

公开(公告)号：US08236475B2

公开(公告)日：2012-08-07

申请号：US12123049

申请日：2008-05-19

申请人： Balgovind Sharma ,  Ying H. Tsang

发明人： Balgovind Sharma ,  Ying H. Tsang

IPC分类号： G03C11/12

CPC分类号： H01L21/31133 ,  G03F7/422 ,  G03F7/425

摘要： Methods for removing a photoresist from a metal-comprising material are provided. In accordance with an exemplary embodiment of the present invention, the method comprises applying to the photoresist a substantially non-aqueous-based solvent having a pH no less than about 9 or no pH and subsequently applying to the metal-comprising material an aqueous-based fluid having a pH no less than about 9.

摘要翻译： 提供了从含金属的材料中去除光致抗蚀剂的方法。 根据本发明的示例性实施方案，该方法包括向光致抗蚀剂施加基本上不含pH的溶剂，其pH值不低于约9或不含pH，并且随后将其施加到含金属的材料上 pH值不低于约9的流体。

公开(公告)号：US20110315921A1

公开(公告)日：2011-12-29

申请号：US13172370

申请日：2011-06-29

申请人： Sunder Ramachandran ,  Vladimir Jovancicevic ,  Ying H. Tsang ,  Michael P. Squicciarini ,  Philippe Prince ,  Jianzhong Yang ,  Kyle C. Cattanach

发明人： Sunder Ramachandran ,  Vladimir Jovancicevic ,  Ying H. Tsang ,  Michael P. Squicciarini ,  Philippe Prince ,  Jianzhong Yang ,  Kyle C. Cattanach

IPC分类号： C02F1/68 ,  C09K3/00 ,  B01D53/14

CPC分类号： C10G29/26 ,  B01D53/1468 ,  B01D53/1487 ,  B01D53/1493 ,  B01D53/48 ,  B01D53/52 ,  B01D2251/304 ,  B01D2251/306 ,  B01D2252/103 ,  B01D2252/20 ,  B01D2252/60 ,  B01D2257/304 ,  B01D2257/306 ,  C02F1/683 ,  C02F2101/101 ,  C02F2101/40 ,  C02F2103/365 ,  C10G19/02 ,  C10G19/04 ,  C10G29/205 ,  C10G29/22 ,  C10G2300/202 ,  C10G2300/207 ,  C10G2300/44

摘要： Hydrogen sulfide (H2S) and/or mercaptan scavengers are chemicals that remove H2S and/or mercaptans from gas, oil and water. Water-based formulations may be made and used employing scavenging compounds having the formulae: wherein each R1, R2, R3, and R4 are the same or different and are selected from the group consisting of hydrogen, an alkyl, an alkenyl, an aryl, an acyl, a halogen, a hydroxyl, a nitro, an alkyl ester, an aryl ester, an alkyl ether, an aryl ether, a hydroxymethyl, an anhydride group, an amino, and a sulfide. In one non-limiting embodiment the compounds (A) and (B) do not contain nitrogen atoms. Water-based formulations, such as those using a protic solvent with the above compounds, work well as H2S scavengers.

摘要翻译： 硫化氢（H2S）和/或硫醇清除剂是从气体，油和水中除去H 2 S和/或硫醇的化学物质。 可以使用具有下式的清除化合物制备和使用水性制剂：其中每个R 1，R 2，R 3和R 4相同或不同，并且选自氢，烷基，烯基，芳基， 酰基，卤素，羟基，硝基，烷基酯，芳基酯，烷基醚，芳基醚，羟甲基，酸酐基，氨基和硫醚。 在一个非限制性实施方案中，化合物（A）和（B）不含有氮原子。 水性制剂，例如使用具有上述化合物的质子溶剂的那些制剂，作为H 2 S清除剂能很好地起作用。

公开(公告)号：US08120144B2

公开(公告)日：2012-02-21

申请号：US13018888

申请日：2011-02-01

申请人： Michael P. Chudzik ,  Rashmi Jha ,  Naim Moumen ,  Keith Kwong Hon Wong ,  Ying H. Tsang

发明人： Michael P. Chudzik ,  Rashmi Jha ,  Naim Moumen ,  Keith Kwong Hon Wong ,  Ying H. Tsang

IPC分类号： H01L29/72

CPC分类号： H01L21/31133 ,  H01L21/31127 ,  H01L21/31138

摘要： Methods for forming a front-end-of-the-line (FEOL) dual high-k gate using a photoresist mask and structures thereof are disclosed. One embodiment of the disclosed method includes depositing a high-k dielectric film on a substrate of a FEOL CMOS structure followed by depositing a photoresist thereon; patterning the high-k dielectric according to the photoresist; and removing the photoresist thereafter. The removing of the photoresist includes using an organic solvent followed by removal of any residual photoresist including organic and/or carbon film. The removal of residual photoresist may include a degas process, alternatively known as a bake process. Alternatively, a nitrogen-hydrogen forming gas (i.e., a mixture of nitrogen and hydrogen) (N2/H2) or ammonia (NH3) may be used to remove the photoresist mask. With the use of the plasma nitrogen-hydrogen forming gas (N2/H2) or a plasma ammonia (NH3), no apparent organic residual is observed.

摘要翻译： 公开了使用光致抗蚀剂掩模及其结构形成前端（FEOL）双高k栅极的方法。 所公开方法的一个实施例包括在FEOL CMOS结构的衬底上沉积高k电介质膜，然后在其上沉积光致抗蚀剂; 根据光致抗蚀剂图案化高k电介质; 之后除去光致抗蚀剂。 去除光致抗蚀剂包括使用有机溶剂，然后除去包括有机和/或碳膜的残留光致抗蚀剂。 去除残留的光致抗蚀剂可以包括脱气工艺，或称为烘烤工艺。 或者，可以使用形成氮气的气体（即，氮气和氢气的混合物）（N 2 / H 2）或氨（NH 3）以除去光致抗蚀剂掩模。 通过使用等离子体形成氮气的气体（N 2 / H 2）或等离子体氨（NH 3），没有观察到明显的有机残留。

公开(公告)号：US20110121436A1

公开(公告)日：2011-05-26

申请号：US13018888

申请日：2011-02-01

申请人： Michael P. Chudzik ,  Rashmi Jha ,  Naim Moumen ,  Keith Kwong Hon Wong ,  Ying H. Tsang

发明人： Michael P. Chudzik ,  Rashmi Jha ,  Naim Moumen ,  Keith Kwong Hon Wong ,  Ying H. Tsang

IPC分类号： H01L23/58 ,  H01L21/31

CPC分类号： H01L21/31133 ,  H01L21/31127 ,  H01L21/31138

摘要： Methods for forming a front-end-of-the-line (FEOL) dual high-k gate using a photoresist mask and structures thereof are disclosed. One embodiment of the disclosed method includes depositing a high-k dielectric film on a substrate of a FEOL CMOS structure followed by depositing a photoresist thereon; patterning the high-k dielectric according to the photoresist; and removing the photoresist thereafter. The removing of the photoresist includes using an organic solvent followed by removal of any residual photoresist including organic and/or carbon film. The removal of residual photoresist may include a degas process, alternatively known as a bake process. Alternatively, a nitrogen-hydrogen forming gas (i.e., a mixture of nitrogen and hydrogen) (N2/H2) or ammonia (NH3) may be used to remove the photoresist mask. With the use of the plasma nitrogen-hydrogen forming gas (N2/H2) or a plasma ammonia (NH3), no apparent organic residual is observed.

摘要翻译： 公开了使用光致抗蚀剂掩模及其结构形成前端（FEOL）双高k栅极的方法。 所公开方法的一个实施例包括在FEOL CMOS结构的衬底上沉积高k电介质膜，然后在其上沉积光致抗蚀剂; 根据光致抗蚀剂图案化高k电介质; 之后除去光致抗蚀剂。 去除光致抗蚀剂包括使用有机溶剂，然后除去包括有机和/或碳膜的残留光致抗蚀剂。 去除残留的光致抗蚀剂可以包括脱气工艺，或称为烘烤工艺。 或者，可以使用形成氮气的气体（即，氮气和氢气的混合物）（N 2 / H 2）或氨（NH 3）以除去光致抗蚀剂掩模。 通过使用等离子体形成氮气的气体（N 2 / H 2）或等离子体氨（NH 3），没有观察到明显的有机残留。

公开(公告)号：US07915115B2

公开(公告)日：2011-03-29

申请号：US12132146

申请日：2008-06-03

申请人： Michael P. Chudzik ,  Rashmi Jha ,  Naim Moumen ,  Keith Kwong Hon Wong ,  Ying H. Tsang

发明人： Michael P. Chudzik ,  Rashmi Jha ,  Naim Moumen ,  Keith Kwong Hon Wong ,  Ying H. Tsang

IPC分类号： H01L29/72

CPC分类号： H01L21/31133 ,  H01L21/31127 ,  H01L21/31138

摘要： Methods for forming a front-end-of-the-line (FEOL) dual high-k gate using a photoresist mask and structures thereof are disclosed. One embodiment of the disclosed method includes depositing a high-k dielectric film on a substrate of a FEOL CMOS structure followed by depositing a photoresist thereon; patterning the high-k dielectric according to the photoresist; and removing the photoresist thereafter. The removing of the photoresist includes using an organic solvent followed by removal of any residual photoresist including organic and/or carbon film. The removal of residual photoresist may include a degas process, alternatively known as a bake process. Alternatively, a nitrogen-hydrogen forming gas (i.e., a mixture of nitrogen and hydrogen) (N2/H2) or ammonia (NH3) may be used to remove the photoresist mask. With the use of the plasma nitrogen-hydrogen forming gas (N2/H2) or a plasma ammonia (NH3), no apparent organic residual is observed.

摘要翻译： 公开了使用光致抗蚀剂掩模及其结构形成前端（FEOL）双高k栅极的方法。 所公开方法的一个实施例包括在FEOL CMOS结构的衬底上沉积高k电介质膜，然后在其上沉积光致抗蚀剂; 根据光致抗蚀剂图案化高k电介质; 之后除去光致抗蚀剂。 去除光致抗蚀剂包括使用有机溶剂，然后除去包括有机和/或碳膜的残留光致抗蚀剂。 去除残留的光致抗蚀剂可以包括脱气工艺，或称为烘烤工艺。 或者，可以使用形成氮气的气体（即，氮气和氢气的混合物）（N 2 / H 2）或氨（NH 3）以除去光致抗蚀剂掩模。 通过使用等离子体形成氮气的气体（N 2 / H 2）或等离子体氨（NH 3），没有观察到明显的有机残留。

公开(公告)号：US20090294920A1

公开(公告)日：2009-12-03

申请号：US12132146

申请日：2008-06-03

申请人： Michael P. Chudzik ,  Rashmi Jha ,  Naim Moumen ,  Keith Kwong Hon Wong ,  Ying H. Tsang

发明人： Michael P. Chudzik ,  Rashmi Jha ,  Naim Moumen ,  Keith Kwong Hon Wong ,  Ying H. Tsang

IPC分类号： H01L23/58 ,  H01L21/311

CPC分类号： H01L21/31133 ,  H01L21/31127 ,  H01L21/31138

摘要： Methods for forming a front-end-of-the-line (FEOL) dual high-k gate using a photoresist mask and structures thereof are disclosed. One embodiment of the disclosed method includes depositing a high-k dielectric film on a substrate of a FEOL CMOS structure followed by depositing a photoresist thereon; patterning the high-k dielectric according to the photoresist; and removing the photoresist thereafter. The removing of the photoresist includes using an organic solvent followed by removal of any residual photoresist including organic and/or carbon film. The removal of residual photoresist may include a degas process, alternatively known as a bake process. Alternatively, a nitrogen-hydrogen forming gas (i.e., a mixture of nitrogen and hydrogen) (N2/H2) or ammonia (NH3) may be used to remove the photoresist mask. With the use of the plasma nitrogen-hydrogen forming gas (N2/H2) or a plasma ammonia (NH3), no apparent organic residual is observed.

摘要翻译： 公开了使用光致抗蚀剂掩模及其结构形成前端（FEOL）双高k栅极的方法。 所公开方法的一个实施例包括在FEOL CMOS结构的衬底上沉积高k电介质膜，然后在其上沉积光致抗蚀剂; 根据光致抗蚀剂图案化高k电介质; 之后除去光致抗蚀剂。 去除光致抗蚀剂包括使用有机溶剂，然后除去包括有机和/或碳膜的残留光致抗蚀剂。 去除残留的光致抗蚀剂可以包括脱气工艺，或称为烘烤工艺。 或者，可以使用形成氮气的气体（即，氮气和氢气的混合物）（N 2 / H 2）或氨（NH 3）以除去光致抗蚀剂掩模。 通过使用等离子体形成氮气的气体（N 2 / H 2）或等离子体氨（NH 3），没有观察到明显的有机残留。