发明授权
- 专利标题： Method of manufacturing semiconductor device and semiconductor device
- 专利标题（中）： 制造半导体器件和半导体器件的方法
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申请号： US12878228申请日： 2010-09-09
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公开(公告)号： US08415245B2公开(公告)日： 2013-04-09
- 发明人: Yasuki Takata , Kaori Sumitomo , Hiroshi Horibe , Hideyuki Arakawa
- 申请人： Yasuki Takata , Kaori Sumitomo , Hiroshi Horibe , Hideyuki Arakawa
- 申请人地址： JP Kanagawa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kanagawa
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2009-207952 20090909; JP2010-124207 20100531
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
Height control of a capillary is performed in a stitch bonding (2nd bond) in a wire bonding, so that a thickness of a stitch portion can be controlled, thereby ensuring a bonding strength at the stitch portion and achieving an improvement in a bonding reliability. Also, the stitch portion has a thick portion, and a wire and a part (α portion) of a bonding region of an inner lead is formed to a lower portion of the thick portion, thereby sufficiently ensuring a thickness of the stitch portion and a bonding region.
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