Invention Grant
- Patent Title: Micro device transfer head with silicon electrode
- Patent Title (中): 带硅电极的微器件转印头
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Application No.: US13481592Application Date: 2012-05-25
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Publication No.: US08415771B1Publication Date: 2013-04-09
- Inventor: Dariusz Golda , Andreas Bibl
- Applicant: Dariusz Golda , Andreas Bibl
- Applicant Address: US CA Santa Clara
- Assignee: LuxVue Technology Corporation
- Current Assignee: LuxVue Technology Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor & Zafman LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/683

Abstract:
A micro device transfer head array and method of forming a micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure protruding above the silicon interconnect. A dielectric layer covers a top surface of each mesa structure.
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