发明授权
- 专利标题： Etched wafers and methods of forming the same
- 专利标题（中）： 蚀刻晶片及其形成方法
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申请号： US12971465申请日： 2010-12-17
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公开(公告)号： US08415805B2公开(公告)日： 2013-04-09
- 发明人: Hong Shen
- 申请人： Hong Shen
- 申请人地址： US MA Woburn
- 专利权人： Skyworks Solutions, Inc.
- 当前专利权人： Skyworks Solutions, Inc.
- 当前专利权人地址： US MA Woburn
- 代理机构： Knobbe Martens Olson & Bear LLP
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
Etched wafers and methods of forming the same are disclosed. In one embodiment, a method of etching a wafer is provided. The method includes forming a metal hard mask on the wafer using electroless plating, patterning the metal hard mask, and etching a plurality of features on the wafer using an etcher. The plurality of featured are defined by the metal hard mask.
公开/授权文献
- US20120153476A1 ETCHED WAFERS AND METHODS OF FORMING THE SAME 公开/授权日：2012-06-21
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