发明授权
- 专利标题： Measuring sheet resistance and other properties of a semiconductor
- 专利标题（中）： 测量薄膜电阻等半导体性能
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申请号： US12961932申请日： 2010-12-07
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公开(公告)号： US08415961B1公开(公告)日： 2013-04-09
- 发明人: Guoheng Zhao , Alex Salnik , Lena Nicolaides , Ady Levy
- 申请人： Guoheng Zhao , Alex Salnik , Lena Nicolaides , Ady Levy
- 申请人地址： US CA Milpitas
- 专利权人： KLA-Tencor Corporation
- 当前专利权人： KLA-Tencor Corporation
- 当前专利权人地址： US CA Milpitas
- 代理机构： Suiter Swantz pc llo
- 主分类号： G01R27/08
- IPC分类号： G01R27/08 ; G01R31/308
摘要：
A method may include illuminating a first area of a semiconductor utilizing a light source. The method may also include measuring at least one characteristic of electrical energy transmission utilizing a probe for placing at least one of at or near the illuminated first area of the semiconductor. The method may further include varying the measured at least one characteristic of the electrical energy transmission generated by the light from the light source incident upon the semiconductor while maintaining an intensity of the light source. Further, the method may include determining a sheet resistance for the junction of the semiconductor utilizing the varied at least one characteristic of the electrical energy transmission.
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