发明授权
US08416631B2 Internal voltage generator circuit and semiconductor memory device using the same
有权
内部电压发生器电路和使用其的半导体存储器件
- 专利标题: Internal voltage generator circuit and semiconductor memory device using the same
- 专利标题(中): 内部电压发生器电路和使用其的半导体存储器件
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申请号: US12874299申请日: 2010-09-02
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公开(公告)号: US08416631B2公开(公告)日: 2013-04-09
- 发明人: Young-Hoon Kim , Nam-Jong Kim
- 申请人: Young-Hoon Kim , Nam-Jong Kim
- 申请人地址: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- 代理机构: Muir Patent Consulting, PLLC
- 优先权: KR10-2009-0083098 20090903
- 主分类号: G11C5/14
- IPC分类号: G11C5/14
摘要:
An internal voltage generator circuit is disclosed. The internal voltage generator circuit includes a comparator configured to compare a first voltage with a reference voltage and to output a comparison signal. The circuit further includes an internal voltage driver configured to receive an external voltage and the comparison signal and to output an internal voltage at an internal voltage output terminal, based on the comparison signal. The circuit further includes a voltage divider circuit including first and second resistor units and a first voltage output terminal between the first and second resistor units, configured to receive the internal voltage, and configured to output the first voltage based on the resistance values of the first and second resistor units, the first and second resistor units connected in series, and the first voltage being output through the first voltage output terminal. The circuit further includes a control signal generator circuit configured to generate at least one resistor control signal for controlling the resistance value of the first resistor unit and at least one resistor control signal for controlling the resistance value of the second resistor unit, on the basis of the comparison signal and a precharge command.
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