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发明授权
US08416632B2 Bitline precharge voltage generator, semiconductor memory device comprising same, and method of trimming bitline precharge voltage 有权
位线预充电电压发生器，包括其的半导体存储器件，以及微调位线预充电电压的方法

Bitline precharge voltage generator, semiconductor memory device comprising same, and method of trimming bitline precharge voltage
摘要：
A bitline precharge voltage generator comprises a leakage trimming unit and a bitline precharge voltage providing unit. The leakage trimming unit applies a leakage current to an output node to place a bitline precharge voltage at an edge of a dead zone. The bitline precharge voltage providing unit provides the bitline precharge voltage to the output node, and sets the bitline precharge voltage to a target level. The bitline precharge voltage generator generates the bitline precharge voltage having a distribution including the dead zone.
摘要（中）：

位线预充电电压发生器包括漏电修整单元和位线预充电电压提供单元。 泄漏修整单元向输出节点施加泄漏电流以将位线预充电电压置于死区的边缘。 位线预充电电压提供单元向输出节点提供位线预充电电压，并将位线预充电电压设置为目标电平。 位线预充电电压发生器产生具有包括死区的分布的位线预充电电压。

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