Invention Grant
- Patent Title: Growth method of Fe3N material
- Patent Title (中): Fe3N材料的生长方法
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Application No.: US12772508Application Date: 2010-05-03
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Publication No.: US08420407B2Publication Date: 2013-04-16
- Inventor: Rong Zhang , Zili Xie , Bin Liu , Xiangqian Xiu , Henan Fang , Hong Zhao , Xuemei Hua , Ping Han , Peng Chen , Youdou Zheng
- Applicant: Rong Zhang , Zili Xie , Bin Liu , Xiangqian Xiu , Henan Fang , Hong Zhao , Xuemei Hua , Ping Han , Peng Chen , Youdou Zheng
- Applicant Address: CN Nanjing, Jiangsu Province
- Assignee: Nanjing University
- Current Assignee: Nanjing University
- Current Assignee Address: CN Nanjing, Jiangsu Province
- Agency: Global IP Services
- Agent Tianhua Gu
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/469 ; H01L21/8246
Abstract:
A kind of growth method of Fe3Nin the MOCVD system, comprising following process: 1) make the surface nitridation of sapphire substrate; 2) pump in carrier gas N2, ammonia and organic gallium sources, and grow low temperature GaN buffer on substrate; 3) raise temperature and grow the GaN supporting layer; 4) pump in FeCp2 as Fe sources, then grow Fe3N on the GaN supporting layer; the Fe3N granular films and the Fe3N single crystal films are obtained.
Public/Granted literature
- US20110269250A1 GROWTH METHOD OF FE3N MATERIAL Public/Granted day:2011-11-03
Information query
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