发明授权
- 专利标题： Growth method of Fe3N material
- 专利标题（中）： Fe3N材料的生长方法
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申请号： US12772508申请日： 2010-05-03
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公开(公告)号： US08420407B2公开(公告)日： 2013-04-16
- 发明人: Rong Zhang , Zili Xie , Bin Liu , Xiangqian Xiu , Henan Fang , Hong Zhao , Xuemei Hua , Ping Han , Peng Chen , Youdou Zheng
- 申请人： Rong Zhang , Zili Xie , Bin Liu , Xiangqian Xiu , Henan Fang , Hong Zhao , Xuemei Hua , Ping Han , Peng Chen , Youdou Zheng
- 申请人地址： CN Nanjing, Jiangsu Province
- 专利权人： Nanjing University
- 当前专利权人： Nanjing University
- 当前专利权人地址： CN Nanjing, Jiangsu Province
- 代理机构： Global IP Services
- 代理商 Tianhua Gu
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/469 ; H01L21/8246
摘要：
A kind of growth method of Fe3Nin the MOCVD system, comprising following process: 1) make the surface nitridation of sapphire substrate; 2) pump in carrier gas N2, ammonia and organic gallium sources, and grow low temperature GaN buffer on substrate; 3) raise temperature and grow the GaN supporting layer; 4) pump in FeCp2 as Fe sources, then grow Fe3N on the GaN supporting layer; the Fe3N granular films and the Fe3N single crystal films are obtained.
公开/授权文献
- US20110269250A1 GROWTH METHOD OF FE3N MATERIAL 公开/授权日：2011-11-03
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