发明授权
- 专利标题: Double-sided integrated circuit chips
- 专利标题(中): 双面集成电路芯片
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申请号: US13164173申请日: 2011-06-20
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公开(公告)号: US08421126B2公开(公告)日: 2013-04-16
- 发明人: Kerry Bernstein , Timothy Dalton , Jeffrey Peter Gambino , Mark David Jaffe , Paul David Kartschoke , Stephen Ellinwood Luce , Anthony Kendall Stamper
- 申请人: Kerry Bernstein , Timothy Dalton , Jeffrey Peter Gambino , Mark David Jaffe , Paul David Kartschoke , Stephen Ellinwood Luce , Anthony Kendall Stamper
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Schmeiser, Olsen & Watts
- 代理商 Richard Kotulak
- 主分类号: H01L27/085
- IPC分类号: H01L27/085
摘要:
Semiconductor structures. The semiconductor structures include two silicon-on-insulator wafers having devices fabricated therein and bonding them back to back utilizing the buried oxide layers or bonding them back to back utilizing an inter-substrate dielectric layer and a bonding layer between the buried oxide layers. The structures include contacts formed in the upper wafer to devices in the lower wafer and wiring levels formed on the upper wafer. The lower wafer may include wiring levels. The lower wafer may include landing pads for the contacts. Contacts to the silicon layer of the lower wafer may be silicided.
公开/授权文献
- US20110241082A1 DOUBLE-SIDED INTEGRATED CIRCUIT CHIPS 公开/授权日:2011-10-06
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