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    Wafer-to-wafer alignments
    3.
    发明授权
    Wafer-to-wafer alignments 失效
    晶圆对晶圆对准

    公开(公告)号：US08004289B2

    公开(公告)日：2011-08-23

    申请号：US12198221

    申请日：2008-08-26

    申请人： Thomas Joseph Dalton ,  Jeffrey Peter Gambino ,  Mark David Jaffe ,  Stephen Ellinwood Luce ,  Edmund Juris Sprogis

    发明人： Thomas Joseph Dalton ,  Jeffrey Peter Gambino ,  Mark David Jaffe ,  Stephen Ellinwood Luce ,  Edmund Juris Sprogis

    IPC分类号： G01R27/26 ,  G01R31/308

    CPC分类号： H01L23/544 ,  H01L25/0657 ,  H01L25/50 ,  H01L2223/54453 ,  H01L2225/06513 ,  H01L2225/06531 ,  H01L2225/06593 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Structures for aligning wafers and methods for operating the same. The structure includes (a) a first semiconductor wafer including a first capacitive coupling structure, and (b) a second semiconductor wafer including a second capacitive coupling structure. The first and second semiconductor wafers are in direct physical contact with each other via a common surface. If the first and second semiconductor wafers are moved with respect to each other by a first displacement distance of 1 nm in a first direction while the first and second semiconductor wafers are in direct physical contact with each other via the common surface, then a change of at least 10−18 F in capacitance of a first capacitor comprising the first and second capacitive coupling structures results. The first direction is essentially parallel to the common surface.

    摘要翻译： 用于对准晶片的结构及其操作方法。 该结构包括（a）包括第一电容耦合结构的第一半导体晶片和（b）包括第二电容耦合结构的第二半导体晶片。 第一和第二半导体晶片经由公共表面彼此直接物理接触。 如果第一和第二半导体晶片在第一方向上相对于彼此移动了1nm的第一位移距离，同时第一和第二半导体晶片经由公共表面彼此直接物理接触，则 包括第一和第二电容耦合结构的第一电容器的电容的至少10-18F的结果。 第一个方向基本上平行于共同的表面。

    WAFER-TO-WAFER ALIGNMENTS
    4.
    发明申请
    WAFER-TO-WAFER ALIGNMENTS 失效
    WAFER-WAFER对准

    公开(公告)号：US20080308948A1

    公开(公告)日：2008-12-18

    申请号：US12198221

    申请日：2008-08-26

    申请人： Thomas Joseph Dalton ,  Jeffrey Peter Gambino ,  Mark David Jaffe ,  Stephen Ellinwood Luce ,  Edmund Juris Sprogis

    发明人： Thomas Joseph Dalton ,  Jeffrey Peter Gambino ,  Mark David Jaffe ,  Stephen Ellinwood Luce ,  Edmund Juris Sprogis

    IPC分类号： H01L23/52 ,  H01L21/66

    CPC分类号： H01L23/544 ,  H01L25/0657 ,  H01L25/50 ,  H01L2223/54453 ,  H01L2225/06513 ,  H01L2225/06531 ,  H01L2225/06593 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Structures for aligning wafers and methods for operating the same. The structure includes (a) a first semiconductor wafer including a first capacitive coupling structure, and (b) a second semiconductor wafer including a second capacitive coupling structure. The first and second semiconductor wafers are in direct physical contact with each other via a common surface. If the first and second semiconductor wafers are moved with respect to each other by a first displacement distance of 1 nm in a first direction while the first and second semiconductor wafers are in direct physical contact with each other via the common surface, then a change of at least 10−18 F in capacitance of a first capacitor comprising the first and second capacitive coupling structures results. The first direction is essentially parallel to the common surface.

    摘要翻译： 用于对准晶片的结构及其操作方法。 该结构包括（a）包括第一电容耦合结构的第一半导体晶片和（b）包括第二电容耦合结构的第二半导体晶片。 第一和第二半导体晶片经由公共表面彼此直接物理接触。 如果第一和第二半导体晶片在第一方向上相对于彼此移动了1nm的第一位移距离，同时第一和第二半导体晶片经由公共表面彼此直接物理接触，则 包括第一和第二电容耦合结构的第一电容器的电容的至少10-18F的结果。 第一个方向基本上平行于共同的表面。

    Wafer-to-wafer alignments
    5.
    发明授权
    Wafer-to-wafer alignments 有权
    晶圆对晶圆对准

    公开(公告)号：US07193423B1

    公开(公告)日：2007-03-20

    申请号：US11275112

    申请日：2005-12-12

    申请人： Timothy Joseph Dalton ,  Jeffrey Peter Gambino ,  Mark David Jaffe ,  Stephen Ellinwood Luce ,  Edmund Juris Sprogis

    发明人： Timothy Joseph Dalton ,  Jeffrey Peter Gambino ,  Mark David Jaffe ,  Stephen Ellinwood Luce ,  Edmund Juris Sprogis

    IPC分类号： G01R27/26 ,  G01R31/02

    CPC分类号： H01L23/544 ,  H01L25/0657 ,  H01L25/50 ,  H01L2223/54453 ,  H01L2225/06513 ,  H01L2225/06531 ,  H01L2225/06593 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Structures for aligning wafers and methods for operating the same. The structure includes (a) a first semiconductor wafer including a first capacitive coupling structure, and (b) a second semiconductor wafer including a second capacitive coupling structure. The first and second semiconductor wafers are in direct physical contact with each other via a common surface. If the first and second semiconductor wafers are moved with respect to each other by a first displacement distance of 1 nm in a first direction while the first and second semiconductor wafers are in direct physical contact with each other via the common surface, then a change of at least 10−18 F in capacitance of a first capacitor comprising the first and second capacitive coupling structures results. The first direction is essentially parallel to the common surface.

    摘要翻译： 用于对准晶片的结构及其操作方法。 该结构包括（a）包括第一电容耦合结构的第一半导体晶片和（b）包括第二电容耦合结构的第二半导体晶片。 第一和第二半导体晶片经由公共表面彼此直接物理接触。 如果第一和第二半导体晶片在第一方向上相对于彼此移动了1nm的第一位移距离，同时第一和第二半导体晶片经由公共表面彼此直接物理接触，则 包括第一电容耦合结构和第二电容耦合结构的第一电容器的电容中的至少10 -18 F。 第一个方向基本上平行于共同的表面。

    Interconnect layers without electromigration
    7.
    发明授权
    Interconnect layers without electromigration 失效
    无电迁移的互连层

    公开(公告)号：US08026606B2

    公开(公告)日：2011-09-27

    申请号：US12547002

    申请日：2009-08-25

    申请人： Stephen Ellinwood Luce ,  Thomas Leddy McDevitt ,  Anthony Kendall Stamper

    发明人： Stephen Ellinwood Luce ,  Thomas Leddy McDevitt ,  Anthony Kendall Stamper

    IPC分类号： H01L21/00

    CPC分类号： H01L23/53238 ,  H01L21/76801 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53228 ,  H01L23/53252 ,  H01L23/53266 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A structure and a method for forming the same. The structure includes (a) an interlevel dielectric (ILD) layer; (b) a first electrically conductive line and a second electrically conductive line both residing in the ILD layer; (c) a diffusion barrier region residing in the ILD layer. The diffusion barrier region (i) physically isolates, (ii) electrically couples together, and (iii) are in direct physical contact with the first and second electrically conductive lines. The first and second electrically conductive lines each comprises a first electrically conductive material. The diffusion barrier region comprises a second electrically conductive material different from the first electrically conductive material. The diffusion barrier region is adapted to prevent a diffusion of the first electrically conductive material through the diffusion barrier region.

    摘要翻译： 一种结构及其形成方法。 该结构包括（a）层间电介质层（ILD）层; （b）位于ILD层中的第一导电线和第二导电线; （c）位于ILD层中的扩散阻挡区域。 扩散阻挡区（i）物理隔离，（ii）电耦合在一起，和（iii）与第一和第二导电线直接物理接触。 第一和第二导电线各自包括第一导电材料。 扩散阻挡区域包括不同于第一导电材料的第二导电材料。 扩散阻挡区域适于防止第一导电材料通过扩散阻挡区域的扩散。

    Wafer-to-wafer alignments
    10.
    发明授权
    Wafer-to-wafer alignments 失效
    晶圆对晶圆对准

    公开(公告)号：US07474104B2

    公开(公告)日：2009-01-06

    申请号：US11557668

    申请日：2006-11-08

    申请人： Thomas Joseph Dalton ,  Jeffrey Peter Gambino ,  Mark David Jaffee ,  Stephen Ellinwood Luce ,  Edmund Juris Sprogis

    发明人： Thomas Joseph Dalton ,  Jeffrey Peter Gambino ,  Mark David Jaffee ,  Stephen Ellinwood Luce ,  Edmund Juris Sprogis

    IPC分类号： G01R27/26 ,  H01L23/544

    CPC分类号： H01L23/544 ,  H01L25/0657 ,  H01L25/50 ,  H01L2223/54453 ,  H01L2225/06513 ,  H01L2225/06531 ,  H01L2225/06593 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Structures for aligning wafers and methods for operating the same. The structure includes (a) a first semiconductor wafer including a first capacitive coupling structure, and (b) a second semiconductor wafer including a second capacitive coupling structure. The first and second semiconductor wafers are in direct physical contact with each other via a common surface. If the first and second semiconductor wafers are moved with respect to each other by a first displacement distance of 1 nm in a first direction while the first and second semiconductor wafers are in direct physical contact with each other via the common surface, then a change of at least 10−18 F in capacitance of a first capacitor comprising the first and second capacitive coupling structures results. The first direction is essentially parallel to the common surface.

    摘要翻译： 用于对准晶片的结构及其操作方法。 该结构包括（a）包括第一电容耦合结构的第一半导体晶片和（b）包括第二电容耦合结构的第二半导体晶片。 第一和第二半导体晶片经由公共表面彼此直接物理接触。 如果第一和第二半导体晶片在第一方向上相对于彼此移动了1nm的第一位移距离，同时第一和第二半导体晶片经由公共表面彼此直接物理接触，则 包括第一和第二电容耦合结构的第一电容器的电容的至少10-18F的结果。 第一个方向基本上平行于共同的表面。