Invention Grant
- Patent Title: Double-sided integrated circuit chips
- Patent Title (中): 双面集成电路芯片
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Application No.: US13164173Application Date: 2011-06-20
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Publication No.: US08421126B2Publication Date: 2013-04-16
- Inventor: Kerry Bernstein , Timothy Dalton , Jeffrey Peter Gambino , Mark David Jaffe , Paul David Kartschoke , Stephen Ellinwood Luce , Anthony Kendall Stamper
- Applicant: Kerry Bernstein , Timothy Dalton , Jeffrey Peter Gambino , Mark David Jaffe , Paul David Kartschoke , Stephen Ellinwood Luce , Anthony Kendall Stamper
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Schmeiser, Olsen & Watts
- Agent Richard Kotulak
- Main IPC: H01L27/085
- IPC: H01L27/085

Abstract:
Semiconductor structures. The semiconductor structures include two silicon-on-insulator wafers having devices fabricated therein and bonding them back to back utilizing the buried oxide layers or bonding them back to back utilizing an inter-substrate dielectric layer and a bonding layer between the buried oxide layers. The structures include contacts formed in the upper wafer to devices in the lower wafer and wiring levels formed on the upper wafer. The lower wafer may include wiring levels. The lower wafer may include landing pads for the contacts. Contacts to the silicon layer of the lower wafer may be silicided.
Public/Granted literature
- US20110241082A1 DOUBLE-SIDED INTEGRATED CIRCUIT CHIPS Public/Granted day:2011-10-06
Information query
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