A Schottky diode with high antistatic capability has an N− type doped drift layer formed on an N+ type doped layer. The N− type doped drift layer has a surface formed with a protection ring. Inside the protection ring is a P-type doped area. The N− type doped drift layer surface is further formed with an oxide layer and a metal layer. The contact region between the metal layer and the N− type doped drift layer and the P-type doped area forms a Schottky contact. The P-type doped area has a low-concentration lower layer and a high-concentration upper layer, so that the surface ion concentration is high in the P-type doped area. The Schottky diode thus has such advantages of lowered forward voltage drop and high antistatic capability.