Invention Grant
- Patent Title: Method and system for quantitative inline material characterization in semiconductor production processes based on structural measurements and related models
- Patent Title (中): 基于结构测量和相关模型的半导体生产过程中定量在线材料表征的方法和系统
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Application No.: US12417787Application Date: 2009-04-03
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Publication No.: US08423320B2Publication Date: 2013-04-16
- Inventor: Matthias Schaller , Thomas Oszinda , Christin Bartsch , Daniel Fischer
- Applicant: Matthias Schaller , Thomas Oszinda , Christin Bartsch , Daniel Fischer
- Applicant Address: US TX Austin
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US TX Austin
- Agency: Williams, Morgan & Amerson, P.C.
- Priority: DE102008029498 20080620
- Main IPC: G01B11/00
- IPC: G01B11/00

Abstract:
By using powerful data analysis techniques, such as PCR, PLS, CLS and the like, in combination with measurement techniques providing structural information, gradually varying material characteristics may be determined during semiconductor fabrication, thereby also enabling the monitoring of complex manufacturing sequences. For instance, the material characteristics of sensitive dielectric materials, such as ULK material, may be detected, for instance with respect to an extension of a damage zone, in order to monitor the quality of metallization systems of sophisticated semiconductor devices. The inline measurement data may be obtained on the basis of infrared spectroscopy, for instance using FTIR and the like, which may even allow directly obtaining the measurement data at process chambers, substantially without affecting the overall process throughput.
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