发明授权
US08423866B2 Non-volatile memory and method with post-write read and adaptive re-write to manage errors
有权
非易失性存储器和具有后写入读取和自适应重写的方法来管理错误
- 专利标题: Non-volatile memory and method with post-write read and adaptive re-write to manage errors
- 专利标题(中): 非易失性存储器和具有后写入读取和自适应重写的方法来管理错误
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申请号: US12642728申请日: 2009-12-18
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公开(公告)号: US08423866B2公开(公告)日: 2013-04-16
- 发明人: Gautam Ashok Dusija , Jian Chen , Chris Avila , Jianmin Huang , Lee M. Gavens
- 申请人: Gautam Ashok Dusija , Jian Chen , Chris Avila , Jianmin Huang , Lee M. Gavens
- 申请人地址: US TX Plano
- 专利权人: SanDisk Technologies, Inc.
- 当前专利权人: SanDisk Technologies, Inc.
- 当前专利权人地址: US TX Plano
- 代理机构: Davis Wright Tremaine LLP
- 主分类号: G06F11/00
- IPC分类号: G06F11/00
摘要:
Data errors in non-volatile memory inevitably increase with usage and with higher density of bits stored per cell. The memory is configured to have a first portion operating with less error but of lower density storage, and a second portion operating with a higher density but less robust storage. Input data is written and staged in the first portion before being copied to the second portion. An error management provides checking the quality of the copied data for excessive error bits. The copying and checking are repeated on a different location in the second portion until either a predetermined quality is satisfied or the number or repeats exceeds a predetermined limit. The error management is not started when a memory is new with little or no errors, but started after the memory has aged to a predetermined amount as determined by the number of erase/program cycling its has experienced.
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