Invention Grant
- Patent Title: Thermal insulation technique for ultra low temperature cryogenic processor
- Patent Title (中): 超低温低温处理器保温技术
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Application No.: US12894206Application Date: 2010-09-30
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Publication No.: US08424317B2Publication Date: 2013-04-23
- Inventor: John Dain , Boyd Bowdish , Nick Henneman
- Applicant: John Dain , Boyd Bowdish , Nick Henneman
- Applicant Address: US UT Orem
- Assignee: Reflect Scientific Inc.
- Current Assignee: Reflect Scientific Inc.
- Current Assignee Address: US UT Orem
- Agency: Tran & Associates
- Main IPC: F17C3/08
- IPC: F17C3/08

Abstract:
Systems and methods are disclosed to provide an ultra low temperature (ULT) cryogenic processor apparatus. The apparatus includes an external housing with flat sides; an inner housing coupled to the external housing to define a vacuum region there between; material disposed in the vacuum region to provide redundant insulation and structural support; and a cryogenic heat exchanger contained in the inner housing.
Public/Granted literature
- US20120055936A1 THERMAL INSULATION TECHNIQUE FOR ULTRA LOW TEMPERATURE CRYOGENIC PROCESSOR Public/Granted day:2012-03-08
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