发明授权
- 专利标题: Evaporation donor substrate and method for manufacturing light-emitting device
- 专利标题(中): 蒸镀供体基板及其制造方法
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申请号: US12272034申请日: 2008-11-17
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公开(公告)号: US08425974B2公开(公告)日: 2013-04-23
- 发明人: Rena Takahashi , Yosuke Sato , Kohei Yokoyama , Tomoya Aoyama
- 申请人: Rena Takahashi , Yosuke Sato , Kohei Yokoyama , Tomoya Aoyama
- 申请人地址: JP
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP
- 代理机构: Husch Blackwell LLP
- 优先权: JP2007-308606 20071129
- 主分类号: B05D5/12
- IPC分类号: B05D5/12 ; B41M5/40
摘要:
A first supporting substrate on a front surface of which a reflective layer having an opening is formed and a second supporting substrate on a front surface of which a light absorption layer patterned into island or stripe shapes and a material layer over the light absorption layer are formed are prepared, the first and second supporting substrates are disposed so that the opening of the reflective layer and the light absorption layer overlap with each other and the reflective layer is in contact with a back surface of the second supporting substrate, the second supporting substrate and a deposition target substrate are disposed so that the front surface of the second supporting substrate faces the deposition target substrate, and the material layer is attached to the deposition target substrate by irradiating the back surface of the first supporting substrate with light and by sublimating the material layer.
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