Invention Grant
- Patent Title: Plasma processing apparatus and plasma processing method
- Patent Title (中): 等离子体处理装置和等离子体处理方法
-
Application No.: US12791095Application Date: 2010-06-01
-
Publication No.: US08426317B2Publication Date: 2013-04-23
- Inventor: Chishio Koshimizu
- Applicant: Chishio Koshimizu
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Pearne & Gordon LLP
- Priority: JP2009-133269 20090602
- Main IPC: H01L21/302
- IPC: H01L21/302

Abstract:
An optimum application voltage for reducing deposits on a peripheral portion of a substrate as well as improving a process result in balance is effectively found without changing a height of a focus ring. A plasma processing apparatus includes a focus ring which includes a dielectric ring provided so as to surround a substrate mounting portion of a mounting table and a conductive ring provided on the dielectric ring; a voltage sensor configured to detect a floating voltage of the conductive ring; a DC power supply configured to apply a DC voltage to the conductive ring. An optimum voltage to be applied to the conductive ring is obtained based on a floating voltage actually detected from the conductive ring, and the optimum application voltage is adjusted based on a variation in the actually detected floating voltage for each plasma process.
Public/Granted literature
- US20100304572A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD Public/Granted day:2010-12-02
Information query
IPC分类: