发明授权
- 专利标题: Thick oxide film by single coating
- 专利标题(中): 厚膜氧化膜采用单层涂层
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申请号: US12751064申请日: 2010-03-31
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公开(公告)号: US08428671B2公开(公告)日: 2013-04-23
- 发明人: Srivatsan Sathyamurthy , Martin W. Rupich
- 申请人: Srivatsan Sathyamurthy , Martin W. Rupich
- 申请人地址: US MA Devens
- 专利权人: American Superconductor Corporation
- 当前专利权人: American Superconductor Corporation
- 当前专利权人地址: US MA Devens
- 代理机构: Occhiuti Rohlicek & Tsao LLP
- 主分类号: H01B12/00
- IPC分类号: H01B12/00
摘要:
An article including a substrate and a layer of a homogeneous metal-oxyfluoride intermediate film disposed on the substrate, the intermediate film containing a rare earth metal, an alkaline earth metal, and a transition metal. The intermediate film has a defect density less than 20 percent and, upon thermal treatment, is capable of converting to a homogeneous rare earth metal-alkaline earth metal-transition metal-oxide superconductor film with a stoichiometric thickness greater than 1 μm and up to 5 μm. Also disclosed is another article including a substrate and the homogeneous superconductor film with a stoichiometric thickness greater than 1 μm and up to 5 μm. Further, methods of making these two articles are described.
公开/授权文献
- US20110245083A1 THICK OXIDE FILM BY SINGLE COATING 公开/授权日:2011-10-06
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