公开(公告)号：US20110245083A1

公开(公告)日：2011-10-06

申请号：US12751064

申请日：2010-03-31

申请人： Srivatsan Sathyamurthy ,  Martin W. Rupich

发明人： Srivatsan Sathyamurthy ,  Martin W. Rupich

IPC分类号： H01L39/12 ,  B32B15/04 ,  B32B9/00 ,  B05D3/02

CPC分类号： H01L39/2425 ,  C23C18/1216 ,  C23C18/1283 ,  H01L39/2451 ,  Y10T428/265

摘要： An article including a substrate and a layer of a homogeneous metal-oxyfluoride intermediate film disposed on the substrate, the intermediate film containing a rare earth metal, an alkaline earth metal, and a transition metal. The intermediate film has a defect density less than 20 percent and, upon thermal treatment, is capable of converting to a homogeneous rare earth metal-alkaline earth metal-transition metal-oxide superconductor film with a stoichiometric thickness greater than 1 μm and up to 5 μm. Also disclosed is another article including a substrate and the homogeneous superconductor film with a stoichiometric thickness greater than 1 μm and up to 5 μm. Further, methods of making these two articles are described.

摘要翻译： 一种制品，其包括基材和设置在基材上的均匀金属 - 氟氧化物中间膜的层，所述中间膜含有稀土金属，碱土金属和过渡金属。 中间膜具有小于20％的缺陷密度，并且在热处理后，能够转化成化学计量厚度大于1μm且高达5的均匀的稀土金属 - 碱土金属 - 过渡金属 - 氧化物超导体膜 μm。 还公开了另一种制品，其包括基材和化学计量厚度大于1μm且高达5μm的均相超导体膜。 此外，描述制造这两个制品的方法。

公开(公告)号：US08428671B2

公开(公告)日：2013-04-23

申请号：US12751064

申请日：2010-03-31

申请人： Srivatsan Sathyamurthy ,  Martin W. Rupich

发明人： Srivatsan Sathyamurthy ,  Martin W. Rupich

IPC分类号： H01B12/00

CPC分类号： H01L39/2425 ,  C23C18/1216 ,  C23C18/1283 ,  H01L39/2451 ,  Y10T428/265

摘要： An article including a substrate and a layer of a homogeneous metal-oxyfluoride intermediate film disposed on the substrate, the intermediate film containing a rare earth metal, an alkaline earth metal, and a transition metal. The intermediate film has a defect density less than 20 percent and, upon thermal treatment, is capable of converting to a homogeneous rare earth metal-alkaline earth metal-transition metal-oxide superconductor film with a stoichiometric thickness greater than 1 μm and up to 5 μm. Also disclosed is another article including a substrate and the homogeneous superconductor film with a stoichiometric thickness greater than 1 μm and up to 5 μm. Further, methods of making these two articles are described.

摘要翻译： 一种制品，其包括基材和设置在基材上的均匀金属 - 氟氧化物中间膜的层，所述中间膜含有稀土金属，碱土金属和过渡金属。 中间膜具有小于20％的缺陷密度，并且在热处理时能够转化成化学计量厚度大于1μm和高达5的均匀稀土金属 - 碱土金属 - 过渡金属 - 氧化物超导体膜 妈妈 还公开了另一种制品，其包括基材和化学计量厚度大于1μm至高达5um的均匀超导体膜。 此外，描述制造这两个制品的方法。

公开(公告)号：US08088503B2

公开(公告)日：2012-01-03

申请号：US12363035

申请日：2009-01-30

申请人： Mariappan Parans Paranthaman ,  Srivatsan Sathyamurthy ,  Tolga Aytug ,  Paul N Arendt ,  Liliana Stan ,  Stephen R Foltyn

发明人： Mariappan Parans Paranthaman ,  Srivatsan Sathyamurthy ,  Tolga Aytug ,  Paul N Arendt ,  Liliana Stan ,  Stephen R Foltyn

IPC分类号： H01B12/00 ,  B05D5/12 ,  H01L39/24

CPC分类号： H01L39/2461 ,  Y10S428/93 ,  Y10S505/74 ,  Y10T428/31678

摘要： A superconducting article includes a substrate having an untextured metal surface; an untextured barrier layer of La2Zr2O7 or Gd2Zr2O7 supported by and in contact with the surface of the substrate; a biaxially textured buffer layer supported by the untextured barrier layer; and a biaxially textured superconducting layer supported by the biaxially textured buffer layer. Moreover, a method of forming a buffer layer on a metal substrate includes the steps of: providing a substrate having an untextured metal surface; coating the surface of the substrate with a barrier layer precursor; converting the precursor to an untextured barrier layer; and depositing a biaxially textured buffer layer above and supported by the untextured barrier layer.

摘要翻译： 超导制品包括具有未结合的金属表面的基材; La2Zr2O7或Gd2Zr2O7的非结构化阻挡层由衬底表面支撑并与衬底的表面相接触; 由所述非纹理化阻挡层支撑的双轴纹理缓冲层; 以及由双轴纹理缓冲层支撑的双轴织构化超导层。 此外，在金属基板上形成缓冲层的方法包括以下步骤：提供具有非纹理金属表面的基板; 用阻挡层前体涂覆基材表面; 将前体转化为无纹理的阻挡层; 并且在非纹理化阻挡层上方并且支撑着双轴织构化的缓冲层。

公开(公告)号：US07553799B2

公开(公告)日：2009-06-30

申请号：US11143369

申请日：2005-06-02

申请人： Mariappan Parans Paranthaman ,  Srivatsan Sathyamurthy ,  Tolga Aytug ,  Paul N. Arendt ,  Liliana Stan ,  Stephen R. Foltyn

发明人： Mariappan Parans Paranthaman ,  Srivatsan Sathyamurthy ,  Tolga Aytug ,  Paul N. Arendt ,  Liliana Stan ,  Stephen R. Foltyn

IPC分类号： H01B12/00 ,  H01F6/00 ,  H01L39/00

CPC分类号： H01L39/2461 ,  Y10S428/93 ,  Y10S505/74 ,  Y10T428/31678

摘要： A superconducting article includes a substrate having an untextured metal surface; an untextured barrier layer of La2Zr2O7 or Gd2Zr2O7 supported by and in contact with the surface of the substrate; a biaxially textured buffer layer supported by the untextured barrier layer; and a biaxially textured superconducting layer supported by the biaxially textured buffer layer. Moreover, a method of forming a buffer layer on a metal substrate includes the steps of: providing a substrate having an untextured metal surface; coating the surface of the substrate with a barrier layer precursor; converting the precursor to an untextured barrier layer; and depositing a biaxially textured buffer layer above and supported by the untextured barrier layer.

摘要翻译： 超导制品包括具有未结合的金属表面的基材; La2Zr2O7或Gd2Zr2O7的非结构化阻挡层由衬底表面支撑并与衬底的表面相接触; 由所述非纹理化阻挡层支撑的双轴纹理缓冲层; 以及由双轴纹理缓冲层支撑的双轴织构化超导层。 此外，在金属基板上形成缓冲层的方法包括以下步骤：提供具有非纹理金属表面的基板; 用阻挡层前体涂覆基材的表面; 将前体转化为无纹理的阻挡层; 并且在非纹理化阻挡层上方并且支撑着双轴织构化的缓冲层。

公开(公告)号：US20090137401A1

公开(公告)日：2009-05-28

申请号：US12363035

申请日：2009-01-30

申请人： Mariappan Parans Paranthaman ,  Srivatsan Sathyamurthy ,  Tolga Aytug ,  Paul N. Arendt ,  Liliana Stan ,  Stephen R. Foltyn

发明人： Mariappan Parans Paranthaman ,  Srivatsan Sathyamurthy ,  Tolga Aytug ,  Paul N. Arendt ,  Liliana Stan ,  Stephen R. Foltyn

IPC分类号： H01L39/24 ,  B05D3/00 ,  B05D3/02

CPC分类号： H01L39/2461 ,  Y10S428/93 ,  Y10S505/74 ,  Y10T428/31678

摘要： A superconducting article includes a substrate having an untextured metal surface; an untextured barrier layer of La2Zr2O7 or Gd2Zr2O7 supported by and in contact with the surface of the substrate; a biaxially textured buffer layer supported by the untextured barrier layer; and a biaxially textured superconducting layer supported by the biaxially textured buffer layer. Moreover, a method of forming a buffer layer on a metal substrate includes the steps of: providing a substrate having an untextured metal surface; coating the surface of the substrate with a barrier layer precursor; converting the precursor to an untextured barrier layer; and depositing a biaxially textured buffer layer above and supported by the untextured barrier layer.

摘要翻译： 超导制品包括具有未结合的金属表面的基材; La2Zr2O7或Gd2Zr2O7的非结构化阻挡层由衬底表面支撑并与衬底的表面相接触; 由所述非纹理化阻挡层支撑的双轴纹理缓冲层; 以及由双轴纹理缓冲层支撑的双轴织构化超导层。 此外，在金属基板上形成缓冲层的方法包括以下步骤：提供具有非纹理金属表面的基板; 用阻挡层前体涂覆基材的表面; 将前体转化为无纹理的阻挡层; 并且在非纹理化阻挡层上方并且支撑着双轴织构化的缓冲层。

公开(公告)号：US20060276344A1

公开(公告)日：2006-12-07

申请号：US11143369

申请日：2005-06-02

申请人： Mariappan Paranthaman ,  Srivatsan Sathyamurthy ,  Tolga Aytug ,  Paul Arendt ,  Liliana Stan ,  Stephen Foltyn

发明人： Mariappan Paranthaman ,  Srivatsan Sathyamurthy ,  Tolga Aytug ,  Paul Arendt ,  Liliana Stan ,  Stephen Foltyn

IPC分类号： H01L39/24

CPC分类号： H01L39/2461 ,  Y10S428/93 ,  Y10S505/74 ,  Y10T428/31678

摘要： A superconducting article includes a substrate having an untextured metal surface; an untextured barrier layer of La2Zr2O7 or Gd2Zr2O7 supported by and in contact with the surface of the substrate; a biaxially textured buffer layer supported by the untextured barrier layer; and a biaxially textured superconducting layer supported by the biaxially textured buffer layer. Moreover, a method of forming a buffer layer on a metal substrate includes the steps of: providing a substrate having an untextured metal surface; coating the surface of the substrate with a barrier layer precursor; converting the precursor to an untextured barrier layer; and depositing a biaxially textured buffer layer above and supported by the untextured barrier layer.

摘要翻译： 超导制品包括具有未结合的金属表面的基材; 不饱和的La 2 O 2 2 N 2 O 3或Gd 2 Zr 2 N的不均匀的阻挡层 由底物表面支撑并与衬底的表面相接触; 由所述非纹理化阻挡层支撑的双轴纹理缓冲层; 以及由双轴纹理缓冲层支撑的双轴织构化超导层。 此外，在金属基板上形成缓冲层的方法包括以下步骤：提供具有非纹理金属表面的基板; 用阻挡层前体涂覆基材的表面; 将前体转化为无纹理的阻挡层; 并且在非纹理化阻挡层上方并且支撑着双轴织构化的缓冲层。