发明授权
- 专利标题： Memory device and operation method to selectively invert data
- 专利标题（中）： 存储器件和操作方法选择性地反转数据
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申请号： US12577891申请日： 2009-10-13
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公开(公告)号： US08429335B2公开(公告)日： 2013-04-23
- 发明人: Chung-Kuang Chen , Han-Sung Chen , Chun-Hsiung Hung
- 申请人： Chung-Kuang Chen , Han-Sung Chen , Chun-Hsiung Hung
- 申请人地址： TW Hsinchu
- 专利权人： Macronix International Co., Ltd.
- 当前专利权人： Macronix International Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： McClure, Qualey & Rodack, LLP
- 主分类号： G06F12/00
- IPC分类号： G06F12/00
摘要：
Provided is a MLC (Multi-level cell) memory device, comprising: a memory array, including a plurality of groups each storing a plurality of bits; and an inverse bit storage section, storing a first inverse bit data including a plurality of inverse bits, the plurality of bits in the same group in the memory array being related to a respective inverse bit.
公开/授权文献
- US20110087838A1 Memory Device and Operation Method Therefor 公开/授权日：2011-04-14
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