发明授权
- 专利标题: Semiconductor device and method for driving the same
- 专利标题(中): 半导体装置及其驱动方法
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申请号: US13185840申请日: 2011-07-19
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公开(公告)号: US08432730B2公开(公告)日: 2013-04-30
- 发明人: Hideki Uochi , Koichiro Kamata
- 申请人: Hideki Uochi , Koichiro Kamata
- 申请人地址: JP Atsugi-shi, Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi-shi, Kanagawa-ken
- 代理机构: Fish & Richardson P.C.
- 优先权: JP2010-169598 20100728
- 主分类号: G11C11/34
- IPC分类号: G11C11/34
摘要:
A transistor includes first and second control gates, and a storage gate. The storage gate is made to be a conductor, supplied with a specific potential, and then made to be an insulator, thereby holding the potential. Data is written by making the storage gate a conductor, supplying a potential of data to be stored, and making the storage gate an insulator. Data is read by making the storage gate an insulator, supplying a potential to a read signal line connected to one of a source and a drain of the transistor, supplying a potential for reading data to the first control gate, and then detecting a potential of a bit line connected to the other of the source and the drain.
公开/授权文献
- US20120026787A1 SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME 公开/授权日:2012-02-02
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