公开(公告)号：US09099437B2

公开(公告)日：2015-08-04

申请号：US13406996

申请日：2012-02-28

申请人： Hideki Uochi

发明人： Hideki Uochi

IPC分类号： H01L29/10 ,  H01L29/423 ,  G11C11/403 ,  H01L21/84 ,  H01L27/108 ,  H01L27/11 ,  H01L27/115 ,  H01L29/49 ,  H01L29/786 ,  G11C5/06 ,  H01L27/12 ,  G11C11/412 ,  G11C16/04

CPC分类号： H01L29/42384 ,  G11C5/063 ,  G11C11/403 ,  G11C11/412 ,  G11C16/0433 ,  H01L21/84 ,  H01L27/10873 ,  H01L27/1108 ,  H01L27/1156 ,  H01L27/12 ,  H01L29/4908 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78642 ,  H01L29/7869 ,  H01L29/78696

摘要： A semiconductor device in which a semiconductor layer is formed over a gate electrode with a large aspect ratio, thereby obtaining a channel length of a transistor which hardly causes a short-channel effect even when the transistor is miniaturized. A lower electrode is provided under the gate electrode with an insulating layer provided therebetween so that the electrode overlaps with the semiconductor layer. A potential (electric field) of the lower electrode imparts a conductivity type to the semiconductor layer overlapping with the lower electrode, so that a source region and a drain region are formed in the semiconductor layer. The gate electrode serves as a shield, so that a region in the semiconductor layer, which faces the gate electrode with the gate insulating layer provided therebetween, is not influenced by the electric field from the lower electrode.

摘要翻译： 一种半导体器件，其中半导体层形成在具有大纵横比的栅电极上，从而获得即使当晶体管小型化时也几乎不引起短沟道效应的晶体管的沟道长度。 下电极设置在栅电极下方，其间设置有绝缘层，使得电极与半导体层重叠。 下部电极的电位（电场）赋予与下部电极重叠的半导体层的导电型，使得在半导体层中形成源极区域和漏极区域。 栅电极用作屏蔽，使得半导体层中面对设置有栅极绝缘层的栅电极的区域不受来自下电极的电场的影响。

公开(公告)号：US08957468B2

公开(公告)日：2015-02-17

申请号：US13285367

申请日：2011-10-31

申请人： Hideki Uochi

发明人： Hideki Uochi

IPC分类号： H01L29/93 ,  G02F1/1362 ,  H01L27/12 ,  H01L29/417

CPC分类号： H01L29/93 ,  G02F1/136213 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/41733

摘要： A variable capacitor with high controllability and stable operation is provided. A liquid crystal display device with low power consumption and excellent display quality is provided. A variable capacitor is formed using two overlapping electrodes of different areas and a substantially intrinsic semiconductor layer formed in contact with one of the electrodes. According to the voltage applied to the electrodes, the semiconductor layer can be considered as a dielectric or a conductor, thereby allowing varying the capacitance of the variable capacitor. The variable capacitor is applied to pixels of a liquid crystal display device configured to switch between a low capacitance and a high capacitance of the variable capacitor in accordance with a moving image display mode and a still image display mode, respectively, whereby a liquid crystal display device with low power consumption and excellent display quality can be realized.

摘要翻译： 提供了具有高可控性和稳定运行的可变电容器。 提供了具有低功耗和优异显示质量的液晶显示装置。 使用不同区域的两个重叠电极和形成为与电极中的一个形成的本质上的半导体层形成可变电容器。 根据施加到电极的电压，半导体层可以被认为是电介质或导体，从而允许改变可变电容器的电容。 根据运动图像显示模式和静止图像显示模式，可变电容器被应用于被配置为在可变电容器的低电容和高电容之间切换的液晶显示装置的像素，由此液晶显示器 可以实现低功耗，优异的显示质量的装置。

公开(公告)号：US08816349B2

公开(公告)日：2014-08-26

申请号：US12898357

申请日：2010-10-05

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Akiharu Miyanaga ,  Junpei Sugao ,  Hideki Uochi ,  Yasuo Nakamura

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Akiharu Miyanaga ,  Junpei Sugao ,  Hideki Uochi ,  Yasuo Nakamura

IPC分类号： H01L27/14

CPC分类号： H01L29/7869 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/324 ,  H01L21/76801 ,  H01L21/76828 ,  H01L21/76838 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606

摘要： By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.

摘要翻译： 通过使用包含Cu的导电层作为长引线，可以抑制布线电阻的增加。 此外，包括Cu的导电层以与形成TFT的沟道区域的氧化物半导体层不重叠并被包括氮化硅的绝缘层包围的方式设置，由此Cu的扩散可以 防止 因此，可以制造高度可靠的半导体器件。 具体地说，作为半导体装置的一个实施方式的显示装置，即使在尺寸或定义增加的情况下也能够具有高的显示质量，并且稳定地工作。

公开(公告)号：US08344374B2

公开(公告)日：2013-01-01

申请号：US12898366

申请日：2010-10-05

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Akiharu Miyanaga ,  Yasuo Nakamura ,  Junpei Sugao ,  Hideki Uochi

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Akiharu Miyanaga ,  Yasuo Nakamura ,  Junpei Sugao ,  Hideki Uochi

IPC分类号： H01L29/10

CPC分类号： H01L29/78669 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1288 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78678 ,  H01L29/7869

摘要： It is an object to provide a semiconductor device typified by a display device having a favorable display quality, in which parasitic resistance generated in a connection portion between a semiconductor layer and an electrode is suppressed and an adverse effect such as voltage drop, a defect in signal wiring to a pixel, a defect in grayscale, and the like due to wiring resistance are prevented. In order to achieve the above object, a semiconductor device according to the present invention may have a structure where a wiring with low resistance is connected to a thin film transistor in which a source electrode and a drain electrode that include metal with high oxygen affinity are connected to an oxide semiconductor layer with a suppressed impurity concentration. In addition, the thin film transistor including the oxide semiconductor may be surrounded by insulating films to be sealed.

摘要翻译： 本发明的目的是提供一种由具有良好的显示质量的显示装置代表的半导体器件，其中在半导体层和电极之间的连接部分中产生的寄生电阻被抑制，并且具有诸如电压降等的不利影响 防止由于布线电阻而导致像素的信号布线，灰度级的缺陷等。 为了实现上述目的，根据本发明的半导体器件可以具有这样的结构，其中具有低电阻的布线连接到薄膜晶体管，其中包括具有高氧亲和力的金属的源电极和漏电极是 连接到具有抑制的杂质浓度的氧化物半导体层。 另外，包含氧化物半导体的薄膜晶体管也可以被要被密封的绝缘膜包围。

公开(公告)号：US20120113341A1

公开(公告)日：2012-05-10

申请号：US13285367

申请日：2011-10-31

申请人： Hideki Uochi

发明人： Hideki Uochi

IPC分类号： H01L29/93 ,  G02F1/1368

CPC分类号： H01L29/93 ,  G02F1/136213 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/41733

摘要： A variable capacitor with high controllability and stable operation is provided. A liquid crystal display device with low power consumption and excellent display quality is provided. A variable capacitor is formed using two overlapping electrodes of different areas and a substantially intrinsic semiconductor layer formed in contact with one of the electrodes. According to the voltage applied to the electrodes, the semiconductor layer can be considered as a dielectric or a conductor, thereby allowing varying the capacitance of the variable capacitor. The variable capacitor is applied to pixels of a liquid crystal display device configured to switch between a low capacitance and a high capacitance of the variable capacitor in accordance with a moving image display mode and a still image display mode, respectively, whereby a liquid crystal display device with low power consumption and excellent display quality can be realized.

摘要翻译： 提供了具有高可控性和稳定运行的可变电容器。 提供了具有低功耗和优异显示质量的液晶显示装置。 使用不同区域的两个重叠电极和形成为与电极中的一个形成的本质上的半导体层形成可变电容器。 根据施加到电极的电压，半导体层可以被认为是电介质或导体，从而允许改变可变电容器的电容。 根据运动图像显示模式和静止图像显示模式，可变电容器被应用于被配置为在可变电容器的低电容和高电容之间切换的液晶显示装置的像素，由此液晶显示器 可以实现低功耗，优异的显示质量的装置。

公开(公告)号：US20120068266A1

公开(公告)日：2012-03-22

申请号：US13282515

申请日：2011-10-27

申请人： Hongyong ZHANG ,  Hideki Uochi ,  Toru Takayama ,  Takeshi Fukunaga ,  Yasuhiko Takemura

发明人： Hongyong ZHANG ,  Hideki Uochi ,  Toru Takayama ,  Takeshi Fukunaga ,  Yasuhiko Takemura

IPC分类号： H01L27/12

CPC分类号： H01L21/02672 ,  G09G2300/0408 ,  H01L21/02532 ,  H01L21/2022 ,  H01L27/1251 ,  H01L27/1277 ,  H01L27/1281 ,  H01L29/66757

摘要： A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum, scandium, titanium, vanadium, chrome, manganese, copper, zinc, gold, silver or silicide thereof in a form of island, line, stripe, dot or film on or under an amorphous silicon film and using them as a starting point, by advancing its crystallization by annealing at a temperature lower than a normal crystallization temperature of an amorphous silicon. A transistor having low leak current and high mobility are obtained in the same time in a dynamic circuit having a thin film transistor by selectively forming a cover film on a semiconductor layer which is to become an active layer of the transistor and by thermally crystallizing it thereafter.

摘要翻译： 提供了使用晶体硅膜制造诸如薄膜晶体管的半导体器件的方法。 通过选择性地形成包含镍，铁，钴，钌，铑，钯，锇，铱，铂，钪，钛，钒，铬，锰，铜，锌，金，银的薄膜，颗粒或簇而获得晶体硅膜 或其硅化物以岛状，线状，条状，点状或薄膜形式存在于非晶硅膜上或下方，并以它们为起始点，通过在比非晶硅的正常结晶温度低的温度下进行退火， 。 在具有薄膜晶体管的动态电路中同时获得具有低漏电流和高迁移率的晶体管，在半导体层上选择性地形成覆盖膜，半导体层将成为晶体管的有源层，并且之后将其热结晶 。

公开(公告)号：US07989815B2

公开(公告)日：2011-08-02

申请号：US12571552

申请日：2009-10-01

申请人： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Tomoya Futamura ,  Takahiro Kasahara

发明人： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Tomoya Futamura ,  Takahiro Kasahara

IPC分类号： H01L29/04

CPC分类号： H01L29/7869 ,  H01L27/0266 ,  H01L27/1225 ,  H01L27/124

摘要： The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first wiring layer and a second wiring layer which are over the gate insulating film and whose end portions overlap with the gate electrode; and an oxide semiconductor layer which is over the gate electrode and in contact with the gate insulating film and the end portions of the first wiring layer and the second wiring layer. The gate electrode of the non-linear element and a scan line or a signal line is included in a wiring, the first or second wiring layer of the non-linear element is directly connected to the wiring so as to apply the potential of the gate electrode.

摘要翻译： 保护电路使用非线性元件形成，该非线性元件包括覆盖栅电极的栅极绝缘膜; 第一布线层和第二布线层，其在栅极绝缘膜上方并且其端部与栅电极重叠; 以及氧化物半导体层，其在所述栅电极的上方并与所述栅极绝缘膜和所述第一布线层和所述第二布线层的端部接触。 非线性元件的栅电极和扫描线或信号线包括在布线中，非线性元件的第一或第二布线层直接连接到布线，以施加栅极的电位 电极。

公开(公告)号：US20110084268A1

公开(公告)日：2011-04-14

申请号：US12898366

申请日：2010-10-05

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Akiharu Miyanaga ,  Yasuo Nakamura ,  Junpei Sugao ,  Hideki Uochi

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Akiharu Miyanaga ,  Yasuo Nakamura ,  Junpei Sugao ,  Hideki Uochi

IPC分类号： H01L29/12 ,  H01L21/16

CPC分类号： H01L29/78669 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1288 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78678 ,  H01L29/7869

摘要： It is an object to provide a semiconductor device typified by a display device having a favorable display quality, in which parasitic resistance generated in a connection portion between a semiconductor layer and an electrode is suppressed and an adverse effect such as voltage drop, a defect in signal wiring to a pixel, a defect in grayscale, and the like due to wiring resistance are prevented. In order to achieve the above object, a semiconductor device according to the present invention may have a structure where a wiring with low resistance is connected to a thin film transistor in which a source electrode and a drain electrode that include metal with high oxygen affinity are connected to an oxide semiconductor layer with a suppressed impurity concentration. In addition, the thin film transistor including the oxide semiconductor may be surrounded by insulating films to be sealed.

摘要翻译： 本发明的目的是提供一种由具有良好的显示质量的显示装置代表的半导体器件，其中在半导体层和电极之间的连接部分中产生的寄生电阻被抑制，并且具有诸如电压降等的不利影响 防止由于布线电阻而导致像素的信号布线，灰度级的缺陷等。 为了实现上述目的，根据本发明的半导体器件可以具有这样的结构，其中具有低电阻的布线连接到薄膜晶体管，其中包括具有高氧亲和力的金属的源电极和漏电极是 连接到具有抑制的杂质浓度的氧化物半导体层。 另外，包含氧化物半导体的薄膜晶体管也可以被要被密封的绝缘膜包围。

公开(公告)号：US07880836B2

公开(公告)日：2011-02-01

申请号：US12816433

申请日：2010-06-16

申请人： Hajime Kimura ,  Hideki Uochi

发明人： Hajime Kimura ,  Hideki Uochi

IPC分类号： G02F1/1335 ,  G02F1/1343

CPC分类号： G02F1/134363 ,  G02F1/133345 ,  G02F1/133371 ,  G02F1/133553 ,  G02F1/133555 ,  G02F1/134309 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/134372 ,  G02F2001/134381 ,  G02F2201/121 ,  G02F2201/123 ,  G02F2203/01 ,  H01L27/12

摘要： It is an object of the present invention to provide a liquid crystal display device which has a wide viewing angle and less color-shift depending on an angle at which a display screen is seen and can display an image favorably recognized both outdoors in sunlight and dark indoors (or outdoors at night). The liquid crystal display device includes a first portion where display is performed by transmission of light and a second portion where display is performed by reflection of light. Further, a liquid crystal layer includes a liquid crystal molecule which rotates parallel to an electrode plane when a potential difference is generated between two electrodes of a liquid crystal element provided below the liquid crystal layer.

摘要翻译： 本发明的目的是提供一种液晶显示装置，其具有宽的视角，并且根据看到显示屏的角度而减少颜色偏移，并且可以在阳光和黑暗中显示出良好地识别在户外的图像 室内（或夜间户外）。 液晶显示装置包括通过透射光进行显示的第一部分和通过反射光进行显示的第二部分。 此外，液晶层包括在设置在液晶层下方的液晶元件的两个电极之间产生电位差时平行于电极平面旋转的液晶分子。

公开(公告)号：US20110012118A1

公开(公告)日：2011-01-20

申请号：US12835907

申请日：2010-07-14

申请人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Hiroyuki MIYAKE ,  Hideaki KUWABARA ,  Hideki UOCHI

发明人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Hiroyuki MIYAKE ,  Hideaki KUWABARA ,  Hideki UOCHI

IPC分类号： H01L27/12 ,  H01L29/786 ,  H01L21/84

CPC分类号： H01L27/1225 ,  H01L27/124 ,  H01L29/45

摘要： An object is to improve the aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate. The driver circuit includes a channel-etched thin film transistor for driver circuit and a driver circuit wiring formed using metal. Source and drain electrodes of the thin film transistor for the driver circuit are formed using a metal. A channel layer of the thin film transistor for the driver circuit is formed using an oxide semiconductor. The display portion includes a bottom-contact thin film transistor for a pixel and a display portion wiring formed using an oxide conductor. Source and drain electrode layers of the thin film transistor for the pixel are formed using an oxide conductor. A semiconductor layer of the thin film transistor for the pixel is formed using an oxide semiconductor.

摘要翻译： 目的是提高半导体器件的开口率。 半导体器件包括驱动器电路部分和在同一衬底上的显示部分（也称为像素部分）。 驱动器电路包括用于驱动电路的通道蚀刻薄膜晶体管和使用金属形成的驱动电路布线。 用于驱动电路的薄膜晶体管的源极和漏极由金属形成。 使用氧化物半导体形成用于驱动电路的薄膜晶体管的沟道层。 显示部分包括用于像素的底接触薄膜晶体管和使用氧化物导体形成的显示部分布线。 用于像素的薄膜晶体管的源极和漏极电极层使用氧化物导体形成。 使用氧化物半导体形成用于像素的薄膜晶体管的半导体层。