A method includes performing a write operation on memory cells of a memory array to a first logic state using a voltage of a charge pump. A portion of the write operation is performed on the memory cells of the memory array using the voltage of the charge pump. A determination is made if the voltage insufficient for performing the write operation on the memory cells of the memory array. If a level of the voltage is insufficient, the write operation is continued with an increased level of the voltage by reducing load on the charge pump by providing the voltage on a reduced number of memory cells. The reduced number of memory cells is a first subset of the memory cells.