- 专利标题: Dispersions of submicron doped silicon particles
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申请号: US13240785申请日: 2011-09-22
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公开(公告)号: US08435477B2公开(公告)日: 2013-05-07
- 发明人: Nobuyuki Kambe , Shivkumar Chiruvolu
- 申请人: Nobuyuki Kambe , Shivkumar Chiruvolu
- 申请人地址: US CA Milpitas
- 专利权人: NanoGram Corporation
- 当前专利权人: NanoGram Corporation
- 当前专利权人地址: US CA Milpitas
- 代理机构: Dardi & Herbert, PLLC
- 代理商 Peter S. Dardi; Nikhil Patel
- 主分类号: C01B33/02
- IPC分类号: C01B33/02
摘要:
Methods are described that have the capability of producing submicron/nanoscale particles, in some embodiments dispersible, at high production rates. In some embodiments, the methods result in the production of particles with an average diameter less than about 75 nanometers that are produced at a rate of at least about 35 grams per hour. In other embodiments, the particles are highly uniform. These methods can be used to form particle collections and/or powder coatings. Powder coatings and corresponding methods are described based on the deposition of highly uniform submicron/nanoscale particles.
公开/授权文献
- US20120012032A1 DISPERSIONS OF SUBMICRON DOPED SILICON PARTICLES 公开/授权日:2012-01-19
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