发明授权
- 专利标题: Semiconductor integrated circuit device and a method for manufacturing a semiconductor integrated circuit device
- 专利标题(中): 半导体集成电路装置及半导体集成电路装置的制造方法
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申请号: US12650537申请日: 2009-12-30
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公开(公告)号: US08435868B2公开(公告)日: 2013-05-07
- 发明人: Hisao Shigihara , Hiromi Shigihara , Akira Yajima
- 申请人: Hisao Shigihara , Hiromi Shigihara , Akira Yajima
- 申请人地址: JP Kawasaki-shi
- 专利权人: Renesas Electronics Corporation
- 当前专利权人: Renesas Electronics Corporation
- 当前专利权人地址: JP Kawasaki-shi
- 代理机构: Miles & Stockbridge P.C.
- 优先权: JP2009-009914 20090120; JP2009-230239 20091002
- 主分类号: H01L21/302
- IPC分类号: H01L21/302
摘要:
With a general wafer level package process, in order to prevent corrosion of an aluminum type pad electrode in a scribe region in a plating process, the pad electrode is covered with a pad protective resin film at the same layer as an organic type protective film in a product region. However, this makes it impossible to perform the probe test on the pad electrode in the scribe region after rewiring formation. The present invention provides a method for manufacturing a semiconductor integrated circuit device of a wafer level package system. The organic type protective films in the chip regions and the scribe region are mutually combined to form an integral film pattern. In a pelletization step, the surface layer portion including the organic type protective film at the central part of the scribe region is first removed by laser grooving, to form a large-width groove. Then, a dicing processing of the central part in this groove results in separation into the chip regions.
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