发明授权
US08437173B2 Nonvolatile memory element, manufacturing method thereof, design support method therefor, and nonvolatile memory device
有权
非易失性存储元件，其制造方法，设计支持方法和非易失性存储器件
- 专利标题： Nonvolatile memory element, manufacturing method thereof, design support method therefor, and nonvolatile memory device
- 专利标题（中）： 非易失性存储元件，其制造方法，设计支持方法和非易失性存储器件
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申请号： US13320654申请日： 2011-03-16
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公开(公告)号： US08437173B2公开(公告)日： 2013-05-07
- 发明人: Yukio Hayakawa , Takumi Mikawa , Yoshio Kawashima , Takeki Ninomiya
- 申请人： Yukio Hayakawa , Takumi Mikawa , Yoshio Kawashima , Takeki Ninomiya
- 申请人地址： JP Osaka
- 专利权人： Panasonic Corporation
- 当前专利权人： Panasonic Corporation
- 当前专利权人地址： JP Osaka
- 代理机构： Wenderoth, Lind & Ponack, LLP.
- 优先权： JP2010-064897 20100319
- 国际申请： PCT/JP2011/001543 WO 20110316
- 国际公布： WO2011/114725 WO 20110922
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
A nonvolatile memory element which can be initialized at low voltage includes a variable resistance layer (116) located between a lower electrode (105) and an upper electrode (107) and having a resistance value that reversibly changes based on electrical signals applied between these electrodes. The variable resistance layer (116) includes at least two layers: a first variable resistance layer (1161) including a first transition metal oxide (116b); and a second variable resistance layer (1162) including a second transition metal oxide (116a) and a third transition metal oxide (116c). The second transition metal oxide (116a) has an oxygen deficiency higher than either oxygen deficiency of the first transition metal oxide (116b) or the third transition metal oxide (116c), and the second transition metal oxide (116a) and the third transition metal oxide (116c) are in contact with the first variable resistance layer (1161).
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